Datasheet > S-LBC847BTT1G

S-LBC847BTT1G

更新时间： 2024-01-24 07:54:34

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	144K
描述
General Purpose Transistors NPN Silicon

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中文翻译

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数据手册

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S-LBC847BTT1G 数据手册

LESHAN RADIO COMPANY, LTD.

LBC847ATT1G

Series

S-LBC847ATT1G

LBC847ATT1G,LBC847BTT1G,LBC847CTT1G

2.0

1.5

1.0

= 10 V

T = 25°C

0.9

0.8

0.7

T = 25°C

@ I /I = 10

C B

BE(sat)

1.0

0.8

@ V = 10 V

BE(on)

0.6

0.5

0.4

0.3

0.6

0.4

0.3

0.2

0.1

@ I /I = 10

C B

CE(sat)

0.2

0.1

0.2

0.5 1.0

2.0

5.0 10

50 100 200

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

I , COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

Figure 2. “Saturation” and “On” Voltages

2.0

1.6

1.2

0.8

0.4

1.0

1.2

1.6

2.0

2.4

2.8

T = 25°C

−55°C to +125°C

= 200 mA

= 50 mA

I = 100 mA

10 mA 20 mA

0.02

0.1

1.0

10 20

0.2

1.0

100

I , BASE CURRENT (mA)

I , COLLECTOR CURRENT (mA)

Figure 3. Collector Saturation Region

Figure 4. Base−Emitter Temperature Coefficient

Rev.O 3/5

1 234 5

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