Datasheet > RU3710R

RU3710R

更新时间： 2022-11-12 00:20:20

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
12页	474K
描述
N-Channel Advanced Power MOSFET

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RU3710R 数据手册

RU3710

Electrical Characteristics (T_A=25°C Unless Otherwise Noted)

RU3710

Symbol

Parameter

Test Condition

Unit

Min. Typ. Max.

Static Characteristics

BV_DSSDrain-Source Breakdown Voltage

I_DSSZero Gate Voltage Drain Current

V_GS(th)Gate Threshold Voltage

100

V_GS=0V, I_DS=250mA

V_DS= 100V, V_GS=0V

T_J=85°C

V_DS=V_GS, I_DS=250mA

I_GSS

Gate Leakage Current

V_GS=±25V, V_DS=0V

±100

②

Drain-Source On-state Resistance V_GS= 10V, I_DS=40A

R_DS(ON)

Diode Characteristics

②

Diode Forward Voltage

I_SD=40 A, V_GS=0V

0.8

1.3

V_SD

trr

Reverse Recovery Time

ISD=40A, dlSD/dt=100A/ms

qrr

Reverse Recovery Charge

180

③

Dynamic Characteristics

R_G

C_iss

C_oss

C_rss

Gate Resistance

V_GS=0V,V_DS=0V,F=1MHz

1.5

3600

510

210

Input Capacitance

VGS=0V,

VDS= 30V,

Frequency=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

t_d(ON)Turn-on Delay Time

t_rTurn-on Rise Time

t_d(OFF)Turn-off Delay Time

t_fTurn-off Fall Time

VDD=35V, RL=35W,

IDS= 1A, VGEN= 10V,

RG=6W

130

150

③

Gate Charge Characteristics

Q_g

Q_gs

Q_gd

Total Gate Charge

120

VDS=80V, VGS= 10V,

IDS=80A

Gate-Source Charge

Gate-Drain Charge

Notes: ①Current limited by wire bond.

②Pulse test ; Pulse width£300ms, duty cycle£2%.

③Guaranteed by design, not subject to production testing.

CopyrightÓ Ruichips Semiconductor Co., Ltd

www.ruichips.com

Rev. C –JAN., 2009

123 4 5 6 7...12

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