RT8250
Electrical Characteristics
(VIN = 12V, TA = 25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
VEN = 0V
Min
--
Typ
0.3
Max
3
Unit
μA
Shutdown Supply Current
Supply Current
VEN = 3 V, VFB = 1V
4.75V ≤ VIN ≤ 23V
ΔIC = ±10μA
--
0.7
1.2
mA
V
Feedback Voltage
VFB
0.911 0.925 0.939
Error Amplifier Transconductance
High-Side Switch On-Resistance
Low-Side Switch On-Resistance
High-Side Switch Leakage Current
GEA
--
--
--
--
1250
100
85
--
--
μA/V
mΩ
mΩ
μA
RDS(ON)1
RDS(ON)2
--
VEN = 0V, VSW = 0V
0
10
Min. Duty Cycle
VBOOT – VSW = 4.8V
Upper Switch Current Limit
--
--
--
5.5
1.4
5.2
--
--
--
A
A
Lower Switch Current Limit
From Drain to Source
COMP to Current Sense
Transconductance
GCS
A/V
Oscillation Frequency
fOSC1
300
--
340
110
90
380
--
kHz
kHz
%
Short Circuit Oscillation Frequency fOSC2
VFB = 0V
Maximum Duty Cycle
Minimum On Time
DMAX
tON
VFB = 0.8V
--
--
--
200
--
--
ns
Logic-High
Logic-Low
VIH
2.7
--
--
EN Threshold
Voltage
V
VIL
--
0.4
Input Under Voltage Lockout
Threshold
Input Under Voltage Lockout
Threshold Hysterisis
VIN Rising
3.8
--
4.2
4.4
--
V
200
mV
Soft-Start Current
Soft-Start Period
Thermal Shutdown
VSS = 0V
--
--
--
7
--
--
--
μA
ms
°C
CSS = 0.1μF
13
TSD
150
Note 1. Stresses listed as the above "Absolute Maximum Ratings" may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θJA is measured in the natural convection at TA = 25°C on a high effective thermal conductivity four-layer test board of
JEDEC 51-7 thermal measurement standard. The case position of θJC is on the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
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DS8250-05 March 2011