Datasheet > RT6208

RT6208

更新时间： 2024-01-31 20:03:09

品牌	Logo	应用领域
立锜 - RICHTEK		/
页数	文件大小	规格书
16页	906K
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技术参数
数据手册

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RT6208 技术参数

Status：	Active	Vin (min) (V)：	4.75
Vin (max) (V)：	36	Number of Outputs：	1
Vout (min) (V)：	0.8	Vout (max) (V)：
Preset Vout (V)：		Output Adj. Method：	Resistor
Iout (max) (A)：	0.1	Current Limit (typ) (A)：	0.225
Freq (typ) (kHz)：		Freq (min) (kHz)：
Freq (max) (kHz)：		Ext Sync：	No
Ron_HS (typ) (mOhm)：	3000	Ron_LS (typ) (mOhm)：	1500
Iq (typ) (mA)：	0.16	Features：	Enable Input;OCP;OVP;PSM;Power Good
Package Type：	SOT-26;SOT-28

RT6208 数据手册

RT6208

Function Block Diagram

VIN

ISET

Internal

Regulator

UVLO

1μA

HS Switch

Current

Comparator

2μA

Current

Sense

1.21

Shutdown

Comparator

Logic &

Deadtime

Control

0.8V

Comparator

1ms Ramp

Current

Sense

LS Switch

Current

AGND

Comparator

PGOOD

Generator

GND

PGOOD

Operation

The RT6208 is a step-down DC/DC converter with

internal power switches that uses Hysteresis Mode

control, combining low quiescent current, which results

in high efficiency across a wide range of load currents.

Hysteresis Mode operation functions by using

Boundary Conduction Mode (BCM) to ramp the

inductor current through the internal power switches,

followed by a sleep cycle where the power switches are

off and the load current is supplied by the output

capacitor. During the sleep cycle, the RT6208 draws

only 25A of supply current. At light loads, the BCM

cycles are a small percentage of the total cycle time

which minimizes the average supply current, greatly

improving efficiency.

comparators are disabled, reducing the VIN pin supply

current to only 25A. As the load current discharges

the output capacitor, the voltage on the V_FBpin

decreases. When this voltage falls 5mV below the

800mV reference, the feedback comparator trips and

enables BCM. At the beginning of the BCM, the internal

high-side power switch (P-channel MOSFET) is turned

on and the inductor current begins to ramp up. The

inductor current increases until either the current

exceeds the peak current comparator threshold, or the

ON time of the high-side MOSFET exceeds 5μs during

the time V_FBis higher than 800mV, at which the

high-side power switch is turned off, and the Low-side

power switch is turned on. The inductor current ramps

down until the reverse current is close to zero. If the

voltage on the V_FBpin is still less than the 800mV

reference, the high-side power switch is turned on

again and another cycle commences which keep the

inductor current operated in a boundary conduction

mode. The average current during the BCM will

Scheme of Hysteresis Mode

The feedback comparator monitors the voltage on the

V_FBpin and compares it to an internal 800mV

reference, as shown in Figure 1. If this voltage is

greater than the reference, the comparator activates a

sleep mode in which the power switches and current

normally be greater than the average load current. For

is a registered trademark of Richtek Technology Corporation.

DS6208-02 May 2016

www.richtek.com

1 234 5 6 7...16

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