RT1C060UN

更新时间： 2024-10-01 06:08:51

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	315K
描述
1.5V Drive Nch MOSFET

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中文翻译

获取价格

数据手册

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RT1C060UN 数据手册

1.5V Drive Nch MOSFET

RT1C060UN

 Structure

 Dimensions (Unit : mm)

Silicon N-channel MOSFET

TSST8

(8)

(1)

(7)

(2)

(6)

(3)

(5)

(4)

Features

1) Low on-resistance.

2) High power package (TSST8).

3) Low voltage drive (1.5V drive).

Abbreviated symbol : VB

 Application

Switching

 Packaging specifications

 Inner circuit

Package

Taping

(7)

(6)

(5)

(8)

Type

Code

∗2

Basic ordering unit (pieces)

3000



(1) Drain

(2) Drain

(3) Drain

(4) Gate

(5) Source

(6) Drain

(7) Drain

(8) Drain

RT1C060UN

∗1

 Absolute maximum ratings (Ta = 25C)

Parameter

(2)

(3)

(4)

(1)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Drain-source voltage

Gate-source voltage

10

Continuous

6

Drain current

Pulsed

I_DP

I_S

24

Continuous

Pulsed

Source current

(Body Diode)

I_SP

Power dissipation

P_D

1.25

C

Channel temperature

Tch

Tstg

150

Range of storage temperature

*1 Pw10s, Duty cycle1%

55 to +150

*2 Each terminal mounted on a ceramic board.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

100

Unit

Channel to Ambient

C / W

* Each terminal mounted on a ceramic board.

www.rohm.com

2010.04 - Rev.A

1/5

12 3 4 5 6

中文翻译

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