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RSR025N03TL PDF预览

RSR025N03TL

更新时间: 2024-01-08 13:06:02
品牌 Logo 应用领域
罗姆 - ROHM 驱动
页数 文件大小 规格书
4页 65K
描述
4V Drive Nch MOS FET

RSR025N03TL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.83
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):2.5 A最大漏极电流 (ID):2.5 A
最大漏源导通电阻:0.118 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3JESD-609代码:e1
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RSR025N03TL 数据手册

 浏览型号RSR025N03TL的Datasheet PDF文件第2页浏览型号RSR025N03TL的Datasheet PDF文件第3页浏览型号RSR025N03TL的Datasheet PDF文件第4页 
RSR025N03  
Transistors  
4V Drive Nch MOS FET  
RSR025N03  
zExternal dimensions (Unit : mm)  
zStructure  
Silicon N-channel  
MOS FET  
TSMT3  
1.0MAX  
2.9  
0.4  
0.85  
0.7  
(
(
)
)
3
zFeatures  
1) Low on-resistance.  
2) Built-in G-S Protection Diode.  
3) Small Surface Mount Package (TSMT3) .  
( )  
2
1
0.95 0.95  
1.9  
0.16  
(1) Gate  
Each lead has same dimensions  
(2) Source  
(3) Drain  
Abbreviated symbol : QY  
zApplication  
Power switching, DC / DC converter.  
zPackaging specifications  
zEquivalent circuit  
(3)  
(3)  
Package  
Taping  
TL  
Type  
Code  
Basic ordering unit (pieces)  
3000  
RSR025N03  
(1)  
2  
(1)  
(2)  
1  
zAbsolute maximum ratings (Ta=25°C)  
(2)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
VDSS  
VGSS  
ID  
Limits  
Unit  
V
(1) Gate  
(2) Source  
(3) Drain  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
30  
20  
V
A protection diode is included between the gate and  
the source terminals to protect the diode against static  
electricity when the product is in use. Use the protection  
circuit when the fixed voltages are exceeded.  
Continuous  
Pulsed  
2.5  
A
Drain current  
1  
IDP  
10  
0.8  
A
Source current  
(Body diode)  
Continuous  
Pulsed  
IS  
A
1  
ISP  
3.2  
A
2  
Total power dissipation  
Channel temperature  
Storage temperature  
1 Pw100µs, Duty cycle2%  
2 Mounted on a ceramic board.  
PD  
1
W
°C  
°C  
Tch  
150  
Tstg  
55 to 150  
zThermal resistance  
Parameter  
Symbol  
Rth (ch-a)∗  
Limits  
125  
Unit  
Channel to ambient  
2 Mounted on a ceramic board.  
°C / W  
Rev.C  
1/3  

RSR025N03TL 替代型号

型号 品牌 替代类型 描述 数据表
2SK3019TL ROHM

类似代替

2.5V Drive Nch MOS FET
2SK3018T106 ROHM

类似代替

2.5V Drive Nch MOS FET
2N7002ET1G ONSEMI

功能相似

Small Signal MOSFET 60 V, 310 mA, Single, N−Channel, SOT−23

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