Datasheet > RSR020P05FRA

RSR020P05FRA

更新时间： 2024-03-03 10:10:28

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
13页	1565K
描述
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

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RSR020P05FRA 数据手册

RSR020P05FRA

ꢀꢀPch -45V -2A Small Signal MOSFET

Datasheet

ꢀꢀ

llOutline

ꢀ

SOT-346T

V_DSS

-45V

190mΩ

±2.0A

1.0W

SC-96

R_DS(on)(Max.)

TSMT3

I_D

ꢀ

P_D

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

llInner circuit

llFeatures

1) Low on - resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT3).

4) Pb-free lead plating ; RoHS compliant

5) AEC-Q101 Qualified

llPackaging specifications

Embossed

Tape

Packing

Reel size (mm)

180

llApplication

Tape width (mm)

Type

Switching

Basic ordering unit (pcs)

Taping code

3000

Marking

llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)

Parameter

Symbol

V_DSS

Value

-45

Unit

Drain - Source voltage

Continuous drain current

Pulsed drain current

I_D

±2.0

I_DP

±8.0

V_GSS

Gate - Source voltage

±20

P_D

1.0

℃

Power dissipation

P_D

0.54

T_j

Junction temperature

150

T_stg

Operating junction and storage temperature range

-55 to +150

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

www.rohm.com

ꢀ ꢀ

1/11

20160808 - Rev.001

12 3 4 5 6 7...13

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