Datasheet > RSQ035N06HZG

RSQ035N06HZG

更新时间： 2023-09-03 20:24:58

品牌	Logo	应用领域
罗姆 - ROHM		开关
页数	文件大小	规格书
14页	1546K
描述
RSQ035N06HZG是非常适用于开关应用的车载级高可靠性MOSFET。

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RSQ035N06HZG 数据手册

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RSQ035N06HZG

Datasheet

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llThermal resistance

Values

Unit

Parameter

Symbol

Min.

Typ. Max.

R_thJA

100 ℃/W

Thermal resistance, junction - ambient

R_thJA

132 ℃/W

llElectrical characteristics (T_a= 25°C)

Values

Parameter

Symbol

Conditions

Unit

Min.

Typ. Max.

Drain - Source breakdown

voltage

V_(BR)DSS

= 0V, I = 1mA

ΔV

I = 1mA

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(BR)DSS

Breakdown voltage

63.7

mV/℃

temperature coefficient

ΔT

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ꢀ ꢀreferenced to 25℃

Zero gate voltage

drain current

I_DSS

= 60V, V = 0V

μA

I_GSS

V_GS(th)

ΔV

= ±20V, V = 0V

Gate - Source leakage current

Gate threshold voltage

±10

3.0

μA

= 10V, I = 1mA

1.0

I = 1mA

ꢀ

GS(th)

Gate threshold voltage

temperature coefficient

-4.4

mV/℃

ΔT

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ꢀ ꢀreferenced to 25℃

= 10V, I = 3.5A

8.1

Static drain - source

on - state resistance

R_DS(on)

= 4.5V, I = 3.5A

mΩ

= 4.0V, I = 3.5A

R_G

|Y |^*4

Gate resistance

f = 1MHz, open drain

Forward Transfer

Admittance

= 10V, I = 3.5A

3.0

*1 Pw≦10μs , Duty cycle≦1%

*2 Mounted on a ceramic board (30×30×0.8mm)

*3 Mounted on a FR4 (25×25×0.8mm)

*4 Pulsed

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www.rohm.com

2/11

20180528 - Rev.001

123 4 5 6 7...14

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