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RSB6.8S_11 PDF预览

RSB6.8S_11

更新时间: 2024-01-31 20:27:27
品牌 Logo 应用领域
罗姆 - ROHM 二极管
页数 文件大小 规格书
3页 1037K
描述
ESD Protection diode

RSB6.8S_11 数据手册

 浏览型号RSB6.8S_11的Datasheet PDF文件第2页浏览型号RSB6.8S_11的Datasheet PDF文件第3页 
Data Sheet  
ESD Protection diode  
RSB6.8S  
Applications  
Dimensions(Unit : mm)  
Land size figure(Unit : mm)  
ESD Protection  
0.8±0.05  
0.12±0.05  
0.8  
Features  
1) Ultra small mold type. (EMD2)  
2) Bi direction high reliability.  
3) Bi chip-mounter, automatic mounting  
is possible.  
EMD2  
Construction  
0.3±0.05  
Silicon epitaxial planar  
Structure  
0.6±0.1  
ROHM : EMD2  
JEDEC :SOD-523  
JEITA : SC-79  
dot (year week factory)  
Taping specifications(Unit : mm)  
0.2±0.05  
φ1.5±0.05  
2.0±0.05  
4.0±0.1  
φ1.55±0.05  
0.2  
φ0.5  
4.0±0.1  
2.0±0.05  
0.90±0.05  
Empty pocket  
0.75±0.05  
Absolute maximum ratings(Ta=25°C)  
Parameter  
Peak Pulse Power (tp=10×1000s)  
Power dissipation  
Limits  
Symbol  
Ppk  
P
Unit  
W
10  
150  
150  
mW  
°C  
Junction temperature  
Tj  
Storage temperature  
-55 to +150  
-55 to +150  
Tstg  
Topor  
°C  
Operating temperature range  
°C  
Electrical characteristics(Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
Conditions  
Vz  
IR  
Zener voltage  
5.78  
-
-
-
7.82  
0.5  
30  
IZ=1mA  
Reverse current  
-
-
μA  
pF  
VR=3.5V  
Capacitance between terminals  
VR=0V , f=1MHz  
Ct  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/2  
2011.03 - Rev.C  

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