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RSB6-8ZST2N PDF预览

RSB6-8ZST2N

更新时间: 2024-01-03 23:37:37
品牌 Logo 应用领域
罗姆 - ROHM 二极管
页数 文件大小 规格书
5页 489K
描述
Bi direction ESD Protection Diode

RSB6-8ZST2N 数据手册

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Data Sheet  
Bi direction ESD Protection Diode  
RSB6.8ZS  
Applications  
Dimensions (Unit : mm)  
ESD Protection  
Features  
1)Ultra small mold type.(GMD2)  
2)Bi-directionality.  
8
00.03  
3)High reliability.  
ROHM : GMD2  
4)By chip-mounter,automatic  
mounting is possible.  
JEDEC : -  
0.27±0.03  
JEITA : -  
0.3±0.06  
0.27±0.03  
dot(year week factory)  
Land size figure (Unit : mm)  
Structure  
Constructions  
0.31  
Silicon epitaxial planer  
GMD2  
Taping dimensions (Unit : mm)  
Absolute maximum ratings (Ta=25°C)  
Parameter  
Power dissipation  
Limits  
100  
Symbol  
P
Unit  
mW  
°C  
Junction temperature  
150  
Tj  
Storage temperature  
Tstg  
Topor  
55 to +150  
55 to +150  
°C  
°C  
Operation temperature range  
Electrical characteristics (Ta=25°C)  
Parameter  
Zener voltage  
Conditions  
IZ=1mA  
VR=3.5V  
Symbol  
Min.  
5.78  
-
Typ.  
Max.  
7.82  
0.5  
Unit  
V
Vz  
IR  
-
-
Reverse current  
μA  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.11 - Rev.A  
1/4  

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