Datasheet > RS2G-HE3/5BT

RS2G-HE3/5BT

更新时间： 2024-01-05 21:02:45

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	81K
描述
DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RS2G-HE3/5BT 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AA
包装说明：	ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.55
Base Number Matches：	1

RS2G-HE3/5BT 数据手册

RS2A thru RS2K

Vishay General Semiconductor

www.vishay.com

Surface Mount Fast Switching Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Fast switching for high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

DO-214AA (SMB)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in fast switching rectification of power supply,

inverters, converters, and freewheeling diodes for

consumer, automotive, and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

1.5 A

MECHANICAL DATA

V_RRM

I_FSM

t_rr

50 V to 800 V

Case: DO-214AA (SMB)

50 A

150 ns, 250 ns, 500 ns

1.3 V

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

V_F

T_Jmax.

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

RS2A

RS2B

RS2D

RS2G

RS2J

RS2K

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

100

200

140

200

400

280

400

600

420

600

800

500

800

Maximum DC blocking voltage

V_DC

100

Maximum average forward rectified current at T_L= 100 °C

I_F(AV)

1.5

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Revision: 14-Mar12

Document Number: 88708

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

下载PDF

与RS2G-HE3/5BT相关器件

型号	品牌	描述	获取价格	数据表
RS2GHE3_A/H	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-214AA, SMB, 2 PIN	获取价格
RS2GHE3_A/I	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-214AA, SMB, 2 PIN	获取价格
RS2G-LFR	FRONTIER	2A FAST RECOVERY SURFACE MOUNT RECTIFIER	获取价格
RS2GT08	RUNIC	逻辑	获取价格
RS2GW	MDD	SURFACE MOUNT FAST RECOVERY RECTIFIER	获取价格
RS2GW	GXELECTRONICS	Surface Mount Fast Recovery Rectifier	获取价格