Datasheet > RQ1A070ZP

RQ1A070ZP

更新时间： 2024-10-03 06:08:39

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
5页	229K
描述
1.5V Drive Pch MOSFET

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中文翻译

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数据手册

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RQ1A070ZP 数据手册

1.5V Drive Pch MOSFET

RQ1A070ZP

zStructure

zDimensions (Unit : mm)

Silicon P-channel MOSFET

TSMT8

(8) (7) (6) (5)

zFeatures

1) Low On-resistance.

2) Low voltage drive. (1.5 V)

3) High power package.

(1) (2) (3) (4)

zApplications

Each lead has same dimensions

Abbreviated symbol : YJ

Switching

zPackaging specifications

zInner circuit

(8)

(7)

(6)

(5)

Package

Taping

Type

Code

Basic ordering unit (pieces)

3000

RQ1A070ZP

∗2

(1) Source

(2) Source

(3) Source

(4) Gate

∗1

zAbsolute maximum ratings (Ta=25°C)

(5) Drain

(1)

(2)

(3)

(4)

(6) Drain

(7) Drain

(8) Drain

Parameter

Drain-source voltage

Symbol

Limits

Unit

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

V_DSS

V_GSS

I_D

−12

Gate-source voltage

Continuous

Pulsed

Drain current

∗1

I_DP

Source current

(Body diode)

Continuous

Pulsed

I_S

−1

−28

1.5

∗1

∗2

I_SP

P_D

°C

Total power dissipation

Channel temperature

Tch

Tstg

150

Range of Storage temperature

−55 to +150

∗1 Pw≤10µs, Duty cycle≤1%

∗2 When mounted on a ceramic board

zThermal resistance

Parameter

Symbol

Rth(ch-a) ^∗

Limits

83.3

Unit

°C/W

Channel to ambient

∗ Mounted on a ceramic board.

www.rohm.com

2009.08 - Rev.A

1/4

12 3 4 5

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