Datasheet > RN2701(TE85L,F)

RN2701(TE85L,F)

更新时间： 2024-01-18 06:03:56

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
7页	470K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353

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中文翻译

获取价格

技术参数
数据手册

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RN2701(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	30	元件数量：	2
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2701(TE85L,F) 数据手册

RN2701~RN2706

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2701,RN2702,RN2703,RN2704,RN2705,RN2706

Switching, Inverter Circuit, Interface Circuit

Unit: mm

And Driver Circuit Applications

z Including two devices in USV (ultra super mini type with 5 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN1701 to 1706

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2701

RN2702

RN2703

RN2704

RN2705

RN2706

4.7

USV

2.2

4.7

JEDEC

―

JEITA

TOSHIBA

2-2L1A

Weight: 6.2 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Equivalent Circuit

(top view)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

−50

−10

−5

CBO

CEO

RN2701 to 2706

Collector-emitter voltage

RN2701 to 2704

RN2705, 2706

Emitter-base voltage

EBO

Collector current

−100

200

150

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

RN2701 to 2706

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Total rating

2010-05-12

12 3 4 5 6 7

中文翻译

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与RN2701(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN2701(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN,
RN2701,LF	TOSHIBA	获取价格	暂无描述
RN2701JE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2701JE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN2701TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2702	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2702(T5L,PP,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
RN2702(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353
RN2702,LF	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN2702JE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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