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RN262G PDF预览

RN262G

更新时间: 2024-01-31 16:47:40
品牌 Logo 应用领域
罗姆 - ROHM 二极管
页数 文件大小 规格书
3页 136K
描述
PIN diode

RN262G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended包装说明:R-PDSO-F2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.74应用:SWITCHING
最小击穿电压:30 V配置:SINGLE
最大二极管电容:0.4 pF标称二极管电容:0.4 pF
二极管元件材料:SILICON最大二极管正向电阻:1.5 Ω
二极管电阻测试电流:3 mA二极管电阻测试频率:100 MHz
二极管类型:PIN DIODEJESD-30 代码:R-PDSO-F2
JESD-609代码:e2湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.1 W
认证状态:Not Qualified反向测试电压:1 V
子类别:PIN Diodes表面贴装:YES
技术:POSITIVE-INTRINSIC-NEGATIVE端子面层:Tin/Copper (Sn/Cu)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

RN262G 数据手册

 浏览型号RN262G的Datasheet PDF文件第2页浏览型号RN262G的Datasheet PDF文件第3页 
RN262G  
Diodes  
PIN diode  
RN262G  
zApplications  
zExternal dimensions (Unit : mm)  
zLand size figure (Unit : mm)  
High frequency switching  
0.5  
0.13±0.03  
0.6±0.05  
zFeatures  
1) Ultra small mold type. (VMD2)  
2) Low high-frequency forward resistance / low  
capacitance (CT).  
VMD2  
zConstruction  
Silicon epitaxial planar  
zStructure  
0.27±0.03  
0.5±0.05  
ROHM : VMD2  
dot (year week factory)  
zTaping dimensions (Unit : mm)  
0.18±0.05  
φ1.5+0.1  
ꢀꢀꢀꢀꢀ0  
2±0.05  
4±0.1  
φ0.5  
0.3  
0.65±0.05  
4±0.1  
2±0.05  
0.76±0.1  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Limits  
30  
100  
100  
150  
Symbol  
VR  
IF  
Unit  
V
mA  
mA  
Reverse voltage  
Forward current  
Power dissipation  
Junction temperature  
Storage temperature  
Pd  
Tj  
Tstg  
-55 to +150  
zElectrical characteristics (Ta=25°C)  
Parameter  
Conditions  
IF=10mA  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Forward voltage  
VF  
IR  
-
-
-
-
-
-
-
-
-
-
1
V
Reverse current  
VR=30V  
0.1  
0.4  
2.8  
1.5  
µA  
pF  
Ω
Ω
VR=1V , f=1MHz  
IF=3mA,f=100MHz  
IF=10mA,f=100MHz  
Capacitance between terminals  
Ct  
High frequency resistance  
Rf  
1/2  

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