Datasheet > RLT1020-500G

RLT1020-500G

更新时间： 2024-09-21 21:55:19

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描述
High Power Infrared Laserdiode

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RLT1020-500G 数据手册

ROITHNER LASERTECHNIK

A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA

TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44

e-mail: office@roithner-laser.com http://www.roithner-laser.com

RLT1020-500G TECHNICAL DATA

High Power Infrared Laserdiode

NOTE!

Structure: InGaAs quantum well

LASERDIODE

Lasing wavelength: 1020 nm typ., multimode

Max. optical power: 600 mW, 1 x 100 µm² aperture

Package: 9 mm

MUST BE COOLED!

PIN CONNECTION:

1) Laser diode cathode

2) Laser diode anode and photodiode cathode

3) Photodiode anode

Maximum Ratings (Tc=25°C)

CHARACTERISTIC

Optical Output Power

LD Reverse Voltage

PD Reverse Voltage

Operating Temperature

Storage Temperature

SYMBOL

P_o

RATING

600

-40 .. +50

-70 .. +85

UNIT

°C

V_R(LD)

V_R(PD)

T_C

T_STG

°C

Optical-Electrical Characteristics (Tc = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT

Optical Output Power

Threshold Current

Operation Current

Operation Voltage

Lasing Wavelength

Spectral Width FWHM

Beam Divergence

Differential Efficiency

Monitor Current

P_o

500

300 350

790 820

I_op

U_op

l _p

q_//

P_o= 500 mW

1.5

1.6

990 1020 1040

0.4

0.7

q_^

dP_o/dI

1.0 mW/mA

µA

I_m

150 350 600

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