Datasheet > RJH65T47DPQ-A0

RJH65T47DPQ-A0

更新时间： 2022-02-26 14:02:30

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
10页	348K
描述
Power Factor Correction circuit

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数据手册

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RJH65T47DPQ-A0 数据手册

RJH65T47DPQ-A0

Preliminary

Collector to Emitter Saturation Voltage

vs. Gate to Emitter Voltage (Typical)

Collector to Emitter Saturation Voltage

vs. Gate to Emitter Voltage (Typical)

Tc = 25

°C

Tc = 150

°C

I_C= 90 A

45 A

Pulse Test

20 A

I_C= 90 A

45 A

20 A

Gate to Emitter Voltage V_GE(V)

Gate to Emitter Cutoff Voltage

vs. Case Temparature (Typical)

Collector to Emitter Saturation Voltage

vs. Case Temparature (Typical)

4.0

V_GE= 15 V

Pulse Test

3.5

3.0

2.5

2.0

1.5

1.0

0.5

I_C= 90 A

45 A

I_C= 10 mA

1.5 mA

20 A

V_CE= 10 V

Pulse Test

−25

25 50 75 100 125 150

−25

25 50 75 100 125 150

Case Temparature Tc (°C)

Case Temparature Tc ( C)

Frequency Characteristics (Typical)

150

120

Ic(max)

Collector current wave

(Square wave)

Tj = 175°C, Tc = 90°C, V_CE= 400 V

_GE= 15 V, Rg = 10Ω , duty = 50%

100

Frequency f (kHz)

R07DS1291EJ0101 Rev.1.01

Oct 22, 2015

Page 4 of 9

1 2 345 6 7...10

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