Datasheet > RJH60T04DPQ-A1

RJH60T04DPQ-A1

更新时间： 2023-12-20 18:46:34

品牌	Logo	应用领域
瑞萨 - RENESAS		双极性晶体管
页数	文件大小	规格书
8页	185K
描述
IGBT 600V 60A TO-247A Built-In FRD

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数据手册

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RJH60T04DPQ-A1 数据手册

RJH60T04DPQ-A1

Preliminary

Collector to Emitter Saturation Voltage

Transfer Characteristics (Typical)

vs. Case Temparature (Typical)

3.5

3.0

2.5

2.0

1.5

1.0

0.5

120

100

V_CE= 10 V

Pulse Test

V_GE= 15 V

Pulse Test

I_C= 60 A

Ta = 150°C

30 A

25°C

15 A

−25

25 50 75 100 125 150

Gate to Emitter Voltage V_GE(V)

Case Temparature Tc (°C)

Gate to Emitter Cutoff Voltage

vs. Case Temparature (Typical)

Forward Current vs. Forward Voltage (Typical)

100

I_C= 10 mA

Ta = 25°C

150°C

1 mA

V_GE= 0 V

Pulse Test

V_CE= 10 V

Pulse Test

−25

0.5

1.0

1.5

2.0

2.5

3.0

25 50 75 100 125 150

Case Temparature Tc (°C)

C-E Diode Forward Voltage V_CEF(V)

Typical Capacitance vs.

Collector to Emitter Voltage

Dynamic Input Characteristics (Typical)

10000

800

V_GE

Cies

V_CC= 480 V

300 V

1000

100

600

400

200

120 V

V_CE

Coes

Cres

V_CC= 480 V

300 V

V_GE= 0 V

f = 1 MHz

I_C= 30 A

Ta = 25

°C

120 V

Ta = 25

°C

100

100 150 200 250 300

Collector to Emitter Voltage V_CE(V)

Gate Charge Qg (μC)

R07DS1191EJ0200 Rev.2.00

Apr 02, 2014

Page 4 of 7

1 2 345 6 7 8

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