Datasheet > RJH60T04DPQ-A1

RJH60T04DPQ-A1

更新时间： 2023-12-20 18:46:34

品牌	Logo	应用领域
瑞萨 - RENESAS		双极性晶体管
页数	文件大小	规格书
8页	185K
描述
IGBT 600V 60A TO-247A Built-In FRD

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RJH60T04DPQ-A1 数据手册

Preliminary Datasheet

RJH60T04DPQ-A1

R07DS1191EJ0200

Rev.2.00

600V - 30A - IGBT

Application:Current resonance circuit

Apr 02, 2014

Features

•

Optimized for current resonance application

Low collector to emitter saturation voltage

_CE(sat)= 1.5 V typ. (at I_C= 30 A, V_GE= 15 V, Ta = 25°C)

•

Built in fast recovery diode in one package

Trench gate and thin wafer technology

High speed switching

t_f= 45 ns typ. (at V_CC= 400 V, V_GE= 15 V , I_C= 30 A, Rg = 10 Ω, Ta = 25°C, Inductive load)

•

Low tail loss

E_tail= 160 μJ typ. (at V_CC= 300 V, V_GE= 20 V, I_C= 50 A, Rg = 15 Ω, Tc = 125°C, current resonance circuit)

Outline

RENESAS Package code: PRSS0003ZH-A

(Package name: TO-247A)

1. Gate

2. Collector

3. Emitter

4. Collector

Absolute Maximum Ratings

(Tc = 25°C)

Item

Collector to emitter voltage

Gate to emitter voltage

Symbol

V_CES

Ratings

Unit

600

V_GES

Note1

Collector current

Tc = 25 °C

I_C

Note1

Tc = 100 °C

I_C

Collector peak current

I_C(peak) ^Note1

I_DF(peak) ^Note2

180

Collector to emitter diode forward peak current

Collector dissipation

P_C

θj-c

θj-cd

208.3

0.6

Junction to case thermal impedance (IGBT)

Junction to case thermal impedance (Diode)

Junction temperature

°C/W

°C

2.1

150

Storage temperature

Tstg

–55 to +150

Notes: 1. Pulse width limited by safe operating area.

2. PW ≤ 5 μs, duty cycle ≤ 1%

R07DS1191EJ0200 Rev.2.00

Apr 02, 2014

Page 1 of 7

12 3 4 5 6 7 8

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