Datasheet > RHN7150

RHN7150

更新时间： 2024-09-24 22:24:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
14页	461K
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TRANSISTOR N-CHANNEL

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Provisional Data Sheet No. PD-9.720A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHN7150

IRHN8150

N-CHANNEL

MEGA RAD HARD

Product Summary

100 Volt, 0.055Ω, MEGA RAD HARD HEXFET

Part Number

IRHN7150

BVDSS

100V

RDS(on)

0.055Ω

International Rectifier’s MEGA RAD HARD technology

HEXFETs demonstrate excellent threshold voltage sta-

bility and breakdown voltage stability at total radiation

doses as high as 1 x 10⁶Rads (Si). Under identical pre-

and post-radiation test conditions, International Rectifier’s

34A

IRHN8150

100V

RAD HARD HEXFETs retain identical electrical specifi- Features:

cations up to 1 x 10⁵Rads (Si) total dose.At 1 x 10⁶Rads

(Si) total dose, under the same pre-dose conditions, only

minor shifts in the electrical specifications are observed

and are so specified in table 1. No compensation in gate

drive circuitry is required. In addition, these devices are

capable of surviving transient ionization pulses as high

as 1 x 10¹²Rads (Si)/Sec, and return to normal operation

within a few microseconds. Single Event Effect (SEE)

testing of International Rectifier RAD HARD HEXFETs

has demonstrated virtual immunity to SEE failure. Since

the MEGA RAD HARD process utilizes International

Rectifier’s patented HEXFET technology, the user can

expect the highest quality and reliability in the industry.

■ Radiation Hardened up to 1 x 10⁶Rads (Si)

■ Single Event Burnout (SEB) Hardened

■ Single Event Gate Rupture (SEGR) Hardened

■ Gamma Dot (Flash X-Ray) Hardened

■ Neutron Tolerant

■ Identical Pre- and Post-Electrical Test Conditions

■ Repetitive Avalanche Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Surface Mount

■ Light-weight

RAD HARD HEXFET transistors also feature all of the

well-established advantages of MOSFETs, such as volt-

age control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

They are well-suited for applications such as switching

power supplies, motor controls, inverters, choppers, au-

dio amplifiers and high-energy pulse circuits in space and

weapons environments.

Absolute Maximum Ratings

Pre-Radiation

Parameter

IRHN7150, IRHN8150

Units

@ V

= 12V, T = 25°C Continuous Drain Current

@ V

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

136

@ T = 25°C

Max. Power Dissipation

150

W/K ➄

Linear Derating Factor

1.2

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➁

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➂

Operating Junction

dv/dt

5.5

V/ns

-55 to 150

^oC

Storage Temperature Range

Package Mounting Surface Temperature

STG

(for 5 sec.)

300

Weight

2.6 (typical)

To Order

12 3 4 5 6 7...14

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