Datasheet > RHP020N06 (KHP020N06)

RHP020N06 (KHP020N06)

更新时间： 2024-10-15 18:09:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	1318K
描述
N-Channel MOSFET

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中文翻译

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数据手册

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RHP020N06 (KHP020N06) 数据手册

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SMD Type

MOSFET

N-Channel MOSFET

RHP020N06 (KHP020N06)

SOT-89

Unit:mm

1.70 0.1

■ Features

● VDS (V) = 60V

● ID = 2 A (VGS = 10V)

● R^DS(ON)＜ 200mΩ (VGS = 10V)

● R^DS(ON)＜ 280mΩ (VGS = 4.5V)

● R^DS(ON)＜ 340mΩ (VGS = 4V)

● High speed switching

0.42 0.1

0.46 0.1

1.Gate

2.Drain

3.Source

DRAIN

GATE

SOURCE

*1 ESD PROTECTION DIODE

*2 BODY DIODE

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

±20

±2

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

±8

0.5

Power Dissipation

250

Thermal Resistance.Junction- to-Ambient

thJA

℃/W

℃

(Note.1)

62.5

150

Junction Temperature

Storage Temperature Range

stg

-55 to 150

Note.1:When mounted on a 40X40X0.7mm ceramic board

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