RH129
6.9V Precision Reference
U
W W W
U
DESCRIPTIO
ABSOLUTE AXI U RATI GS
The RH129 precision reference features excellent stability
over a wide range of voltage, temperature and operating
current conditions. The device achieves low dynamic
impedance by incorporating a high gain shunt regulator
around the Zener. The excellent noise performance of the
device is achieved by using a buried Zener design which
eliminates surface noise usually associated with ordinary
Zeners.
Reverse Breakdown Current ................................ 30mA
Forward Current..................................................... 2mA
Operating Temperature Range ............. –55°C to 125°C
Storage Temperature Range ................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
, LTC and LT are registered trademarks of Linear Technology Corporation.
The wafer lots are processed to LTC's in-house Class S
flow to yield circuits usable in stringent military applica-
tions.
U U
U W
U
BUR -I CIRCUIT
TOTAL DOSE BIAS CIRCUIT
PACKAGE INFORMATION
20V
15V
BOTTOM VIEW
10k
12.4k
1
2
RH1009 BI
RH129 TDBC1
H PACKAGE
2-LEAD TO-46 METAL CAN
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation)
T = 25°C
SUB-
SUB-
GROUP
–55°C T
125°C
A
A
SYMBOL PARAMETER
CONDITIONS
NOTES MIN TYP MAX GROUP
MIN TYP MAX
UNITS
V
Reverse Breakdown Voltage
0.6mA
I
15mA
6.7
7.2
14
1
V
Z
R
V
I
Reverse Breakdown
Voltage Change with Current 1mA
0.6mA
I
R
15mA
15mA
mV
mV
Z
R
I
12
R
V
Temp
Temperature Coefficient
I
= 1mA, RH129A
RH129B
10
20
50
2, 3
2, 3
2, 3
ppm/°C
ppm/°C
ppm/°C
Z
R
RH129C
Change in TC
1mA
I
15mA
1
ppm/°C
R
r
Dynamic Impedance
I
= 1mA
2
Z
R
1mA I
15mA
10kHz
1
2
0.8
R
en
RMS Noise
10Hz
f
20
1
µV
V
Long Term Stability
T = 25°C±0.1°C,
A
Z
Time
I
= 1mA ±0.3%
20
ppm/kHr
R
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
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