Datasheet > RGP30G-E3/73

RGP30G-E3/73

更新时间： 2024-01-01 18:00:17

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	71K
描述
DIODE GEN PURP 400V 3A DO201AD

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RGP30G-E3/73 数据手册

RGP30A, RGP30B, RGP30D, RGP30G, RGP30J, RGP30K, RGP30M

www.vishay.com

Vishay General Semiconductor

Glass Passivated Junction Fast Switching Plastic Rectifier

FEATURES

• Superectifier structure for high reliability condition

SUPERECTIFIER^®

• Cavity-free glass-passivated junction

• Fast switching for high efficiency

• Low leakage current, typical I_Rless than 0.2 μA

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

DO-201AD

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

PRIMARY CHARACTERISTICS

For use in fast switching rectification of power supply,

inverters, converters and freewheeling diodes for

consumer and telecommunication.

I_F(AV)

3.0 A

50 V, 100 V, 200 V, 400 V, 600 V,

800 V, 1000 V

V_RRM

I_FSM

V_F

125 A

1.3 V

MECHANICAL DATA

Case: DO-201AD, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

I_R

5.0 μA

T_Jmax.

Package

Diode variation

175 °C

DO-201AD

Single die

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL RGP30A RGP30B RGP30D RGP30G RGP30J RGP30K RGP30M UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

100

1000

Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_A= 55 °C

I_F(AV)

I_FSM

3.0

Peak forward surge current 8.3 ms single

half sine-wave superimposed on rated load

125

Maximum full load reverse current,

full cycle average 0.375" (9.5 mm)

lead length at T_A= 55 °C

I_R(AV)

100

μA

°C

Operating junction and

storage temperature range

T_J, T_STG

-65 to +175

Revision: 07-Nov-16

Document Number: 88704

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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