Datasheet > RGP30A-HE3

RGP30A-HE3

更新时间： 2024-10-04 10:20:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	294K
描述
DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectifier Diode

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中文翻译

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数据手册

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RGP30A-HE3 数据手册

RGP30A thru RGP30M

Vishay General Semiconductor

Glass Passivated Junction Fast Switching Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

3.0 A

50 V to 1000 V

125 A

150 ns, 250 ns, 500 ns

5.0 µA

I_R

V_F

1.3 V

T_jmax.

175 °C

DO-201AD

* Glass-plastic encapsulation

technique is covered by

Patent No. 3,996,602, and

brazed-lead assembly by

Patent No. 3,930,306

Features

Mechanical Data

• Superectifier structure for High Reliability

condition

Case: DO-201AD, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Cavity-free glass-passivated junction

• Fast switching for high efficiency

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Low leakage current, typical I less than 0.2 µA

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in fast switching rectification of power supply,

inverters, converters and freewheeling diodes for

consumer, automotive and Telecommunication

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol RGP30A RGP30B RGP30D RGP30G RGP30J RGP30K RGP30M Unit

Maximum repetitive peak reverse voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

3.0

600

420

600

800

560

800

1000

700

Maximum RMS voltage

Maximum DC blocking voltage

100

1000

Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_A= 55 °C

I_F(AV)

Peak forward surge current 8.3 ms single

half sine-wave superimposed on rated load

I_FSM

125

100

Maximum full load reverse current, full

cycle average 0.375" (9.5 mm) lead length

at T_A= 55 °C

I_R(AV)

µA

Operating junction and storage

temperature range

T_J,T_STG

- 65 to + 175

°C

Document Number 88704

19-Sep-05

www.vishay.com

12 3 4

中文翻译

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与RGP30A-HE3相关器件

型号	品牌	获取价格	描述	数据表
RGP30A-HE3/54	VISHAY	获取价格	DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Re
RGP30AHE3/73	VISHAY	获取价格	DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Re
RGP30A-HE3/73	VISHAY	获取价格	DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Re
RGP30A-T	MCC	获取价格	Rectifier Diode,
RGP30A-T/B	FRONTIER	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
RGP30A-T/R	FRONTIER	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
RGP30B	SUNMATE	获取价格	3A plug-in fast recovery diode 100V DO-201 series
RGP30B	VISHAY	获取价格	GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
RGP30B	MCC	获取价格	3.0 Amp Glass Passivated Junction Fast Recovery Rectifiers 50 to 1000 Volts
RGP30B	GULFSEMI	获取价格	SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 3.0A