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RGP10G-E3 PDF预览

RGP10G-E3

更新时间: 2024-10-01 14:44:27
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 320K
描述
Rectifier Diode, 1 Element, 1A, 400V V(RRM),

RGP10G-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.81
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJESD-609代码:e3
最大非重复峰值正向电流:30 A元件数量:1
最高工作温度:175 °C最大输出电流:1 A
最大重复峰值反向电压:400 V最大反向恢复时间:0.15 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)Base Number Matches:1

RGP10G-E3 数据手册

 浏览型号RGP10G-E3的Datasheet PDF文件第2页浏览型号RGP10G-E3的Datasheet PDF文件第3页浏览型号RGP10G-E3的Datasheet PDF文件第4页 
RGP10A thru RGP10M  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
50 V to 1000 V  
30 A  
®
150 ns, 250 ns, 500 ns  
5.0 µA  
IR  
*
d
VF  
1.3 V  
e
t
n
e
t
Tj max.  
175 °C  
a
P
*Glass Encapsulation  
DO-204AL (DO-41)  
technique is covered by  
Patent No. 3,996,602,  
brazed-lead assembly  
to Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
condition  
Case: DO-204AL, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in fast switching rectification of power supply,  
inverters, converters and freewheeling diodes for  
consumer, automotive and Telecommunication  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol RGP10A RGP10B RGP10D RGP10G RGP10J RGP10K RGP10M  
Unit  
V
Maximum repetitive peak reverse  
voltage  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
1.0  
420  
600  
560  
800  
700  
V
V
A
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified  
current 0.375" (9.5 mm) lead length  
at TA = 55 °C  
IF(AV)  
Peak forward surge current 8.3 ms  
single half sine-wave superimposed  
on rated load  
IFSM  
30  
A
Maximum full load reverse current,  
full cycle average 0.375" (9.5 mm)  
lead length TA = 55 °C  
IR(AV)  
100  
µA  
Operating junction and storage  
temperature range  
TJ,TSTG  
- 65 to + 175  
°C  
Document Number 88700  
19-Sep-05  
www.vishay.com  
1

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