Datasheet > RGP10G-M3/73

RGP10G-M3/73

更新时间： 2024-10-01 22:49:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	69K
描述
DIODE GEN PURP 400V 1A DO204AL

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

RGP10G-M3/73 数据手册

RGP10A, RGP10B, RGP10D, RGP10G, RGP10J, RGP10K, RGP10M

www.vishay.com

Vishay General Semiconductor

Glass Passivated Junction Fast Switching Plastic Rectifier

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

SUPERECTIFIER^®

• Fast switching for high efficiency

• Low leakage current

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DO-41 (DO-204AL)

TYPICAL APPLICATIONS

PRIMARY CHARACTERISTICS

For use in fast switching rectification of power supply,

inverters, converters and freewheeling diodes for consumer

and telecommunication.

I_F(AV)

1.0 A

50 V, 100 V, 200 V, 400 V, 600 V,

800 V, 1000 V

V_RRM

I_FSM

t_rr

30 A

150 ns, 250 ns, 500 ns

5.0 μA

MECHANICAL DATA

Case: DO-41 (DO-204AL), molded epoxy over glass body

I_R

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

V_F

1.3 V

T_Jmax.

Package

175 °C

DO-41 (DO-204AL)

Single

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Circuit configuration

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL RGP10A RGP10B RGP10D RGP10G RGP10J RGP10K RGP10M UNIT

Maximum repetitive peak

reverse voltage

V_RRM

100

200

400

600

800

1000

Maximum RMS voltage

V_RMS

V_DC

140

200

280

400

420

600

560

800

700

Maximum DC blocking voltage

100

1000

Maximum average forward rectified

current 0.375" (9.5 mm) lead length

at T_A= 55 °C

I_F(AV)

1.0

Peak forward surge current 8.3 ms

single half sine-wave

I_FSM

superimposed on rated load

Maximum full load reverse current,

full cycle average 0.375" (9.5 mm)

lead length T_A= 55 °C

I_R(AV)

100

μA

°C

Operating junction and storage

temperature range

T_J, T_STG

-65 to +175

Revision: 29-Apr-2020

Document Number: 88700

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

RGP10G-M3/73 替代型号

型号	品牌	替代类型	描述	数据表
RGP10GHM3/73	VISHAY	完全替代	DIODE GEN PURP 400V 1A DO204AL

与RGP10G-M3/73相关器件

型号	品牌	获取价格	描述	数据表
RGP10G-T	MCC	获取价格	Rectifier Diode,
RGP10G-T/B	FRONTIER	获取价格	Rectifier Diode, 1 Element, 1A, Silicon
RGP10G-T/R	FRONTIER	获取价格	Rectifier Diode, 1 Element, 1A, Silicon
RGP10GT26A	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41
RGP10GT26R	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41
RGP10GT50R	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, D4, 2 PIN
RGP10G-TP	MCC	获取价格	暂无描述
RGP10J	BL Galaxy Electrical	获取价格	FAST RECOVERY RECTIFIER
RGP10J	TAITRON	获取价格	1.0A Sintered Glass Passivated Fast Recovery Rectifier
RGP10J	FAIRCHILD	获取价格	1.0 Ampere Glass Passivated Fast Recovery Rectifiers

与RGP10G-M3/73相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

34
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

28
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

27
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

38

产品中心

服务支持

精选活动

关于我们

帮助中心

RGP10G-M3/73

RGP10G-M3/73 数据手册

RGP10G-M3/73 替代型号

与RGP10G-M3/73相关器件

与RGP10G-M3/73相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RGP10G-M3/73

RGP10G-M3/73 数据手册

RGP10G-M3/73 替代型号

与RGP10G-M3/73相关器件

与RGP10G-M3/73相关文章

您还可以找

您在本页遇到什么问题？