RF5163
3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER
0
RoHS Compliant & Pb-Free Product
Typical Applications
• 802.11b/g/n Access Points
• PCS Communication Systems
• 2.4GHz ISM Band Applications
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• Broadband Spread-Spectrum Systems
Product Description
2 PLCS
0.05 C
0.10 C
A
-A-
The RF5163 is a linear, medium-power, high-efficiency
amplifier IC designed specifically for low voltage opera-
tion. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as the final RF
amplifier in 802.11b/g/n access point transmitters. The
device is provided in a 4mmx4mm, 16-pin, leadless chip
carrier with a backside ground. The RF5163 is designed
to maintain linearity over a wide range of supply voltage
and power output.
0.90
0.85
4.00 SQ.
0.70
0.65
2.00 TYP
0.05
0.00
0.10 C
B
2 PLCS
12°
MAX
0.10 C B
2 PLCS
-B-
-C-
SEATING
PLANE
1.87 TYP
3.75 SQ
Shaded lead is pin 1.
0.10 C
2 PLCS
A
Dimensions in mm.
0.10M C A
B
0.60
0.24
TYP
0.35
0.23
Pin 1 ID
0.20 R
2.25
SQ.
1.95
0.75
0.50
TYP
0.65
Optimum Technology Matching® Applied
Package Style: QFN, 16-Pin, 4x4
Si BJT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
9
Si Bi-CMOS
InGaP/HBT
Si CMOS
Features
SiGe Bi-CMOS
• Single 3.3V or 5V Power Supply
• +33dBm Saturated Output Power (typ.)
• 20dB Large Signal Gain (typ.)
16
15
14
13
• 2.0% EVM @ +26dBm, 54Mbps (typ.)
• Separate Power Detect/Power Down Pins
• 1800MHz to 2500MHz Frequency Range
RF IN
1
2
3
4
12 RF OUT
11 RF OUT
10 RF OUT
VREG1GND
P DOWN
Bias
Ordering Information
P DETECT
9 GND
RF5163
3V-5V, 2.5GHz Linear Power Amplifier, Matte-Sn
(Pb-free) Finish
5
6
7
8
RF5163L
3V-5V, 2.5GHz Linear Power Amplifier, Sn-Pb Finish
RF5163PCBA-41XFully Assembled Evaluation Board
RF5163PCBA-WDFully Assembled Evaluation Board, With Driver
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A12 061114
2-627