Datasheet > RF3145

RF3145

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
威讯 - RFMD		放大器功率放大器过程控制系统分布式控制系统 PCS GSM DCS
页数	文件大小	规格书
18页	143K
描述
QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE

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RF3145 数据手册

RF3145

QUAD-BAND GSM/EDGE/GSM850/DCS/PCS

POWER AMPLIFIER MODULE

RoHS Compliant & Pb-Free Product

Typical Applications

• 3V Dual/Triple/Quad-Band Mode Handsets • Commercial and Consumer Systems

• Portable Battery-Powered Equipment

• GSM850 and GSM900 Products

• EDGE and GPRS Class 12 Compatible

• DCS/PCS Products

Product Description

1.70

1.45

The RF3145 is a high power, high efficiency power ampli-

fier module with integrated power control. This module is

self-contained with 50Ω input and output terminals. The

device is manufactured on an advance Gallium Arsenide

Heterojunction Bipolar Transistor (HBT) process, and has

been designed for use as the final dual-mode

GMSK/8PSK RF amplifier in GSM, DCS and PCS hand-

held cellular equipment and other applications in the

824MHz to 849MHz, 880MHz to 915MHz, and in the

1710MHz to 1910MHz bands. Internal band select pro-

vides control to select the GSM850/GSM900 or

DCS/PCS band. The device is packaged on ultra-small

LCC, minimizing the required board space.

10.00±0.10

0.450±0.075

10.00±0.10

9.600 TYP

8.800 TYP

8.725

8.200 TYP

6.155

7.400 TYP

6.100

6.800 TYP

6.000 TYP

5.475

5.925

5.400 TYP

4.600 TYP

4.525

4.075

4.000 TYP

3.955

3.200 TYP

2.600 TYP

1.800 TYP

1.200 TYP

0.400 TYP

0.000

1.275

Optimum Technology Matching® Applied

Package Style: Module (10mmx10mm)

Si BJT

GaAs HBT

SiGe HBT

GaN HEMT

GaAs MESFET

Si Bi-CMOS

InGaP/HBT

Si CMOS

Features

SiGe Bi-CMOS

• Integrated Power Control & Band Select

• Single 3.0V to 4.8V Supply Voltage

• +35.0dBm GSM Output Pwr at 3.5V

• +33dBm DCS/PCS Output Pwr at 3.5V

• +29dBm 8PSK Output Pwr

DCS IN

BAND SELECT

TX ENABLE

VBATT

11 DCS OUT

• 53% GSM and 50% DCS/PCS PAE

10 NC

VMODE

Ordering Information

VRAMP

RF3145

Quad-Band GSM/EDGE/GSM850/DCS/PCS Power

Amplifier Module

GSM IN

9 GSM OUT

Power Amplifier Module, 5 Piece Sample Pack

RF3145PCBA-41XFully Assembled Evaluation Board

RF Micro Devices, Inc.

Tel (336) 664 1233

7628 Thorndike Road

Greensboro, NC 27409, USA

Fax (336) 664 0454

http://www.rfmd.com

Functional Block Diagram

Rev A4 050919

2-519

12 3 4 5 6 7...18

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与RF3145相关器件

型号	品牌	描述	获取价格	数据表
RF3145_1	RFMD	QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE	获取价格
RF3145PCBA-41X	RFMD	QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE	获取价格
RF3146	RFMD	QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE	获取价格
RF3146_06	RFMD	QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE	获取价格
RF3146_1	RFMD	QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE	获取价格
RF3146D	RFMD	DUAL-BAND GSM900/DCS POWER AMP MODULE	获取价格