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RF3159 PDF预览

RF3159

更新时间： 2024-01-02 07:53:05
品牌 Logo 应用领域
威讯 - RFMD 放大器功率放大器过程控制系统分布式控制系统PCSGSMDCS
页数 文件大小 规格书
26页 567K
描述
QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE

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RF3159 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：compliantECCN代码：5A991.G
HTS代码：8517.62.00.50风险等级：5.89
特性阻抗：50 Ω构造：COMPONENT
增益：31 dB最大输入功率 (CW)：4 dBm
最大工作频率：849 MHz最小工作频率：824 MHz
射频/微波设备类型：NARROW BAND LOW POWER最大电压驻波比：2.5
Base Number Matches：1

RF3159 数据手册

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RF3159  
QUAD-BAND GSM/EDGE/GSM850/EGSM900  
/DCS/PCS/POWER AMPLIFIER MODULE  
RoHS Compliant & Pb-Free Product  
Package Style: Module (6mmx6mm)  
HB RFIN  
BAND SEL  
TX EN  
HB RFOUT  
18  
1
2
3
4
5
6
7
Features  
„
„
„
„
High Gain for use in Systems  
with Low RF Driver Power  
Integrated Power  
Control  
VBATT  
Linear EDGE and GSM Opera-  
tion  
VMODE  
VRAMP  
LB RFIN  
PowerStar® GSM/GPRS  
Power Control  
Digital Band Select Enables  
GSM850, EGSM900 or DCS,  
PCS Amplifier Lineup  
LB RFOUT  
12  
8
„
„
Single Supply Voltage;  
Requires no External Refer-  
ence Voltage  
Functional Block Diagram  
Automatic V  
cuit avoids Switching Tran-  
Tracking Cir-  
BATT  
Product Description  
sients at Low Supply Voltage  
The RF3159 is a high power, dual-mode amplifier module with integrated  
power control. The input and output terminals are internally matched to  
50Ω. The amplifier devices are manufactured on an advanced Gallium  
Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, which is  
designed to operate either in saturated mode for GMSK signaling or linear  
mode for 8PSK signaling. The module is designed to be the final amplifica-  
tion stage in a dual-mode GSM/EDGE mobile transmit lineup operating in  
the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands  
(such as a cellular handset). Band selection is controlled by an input on  
the module which selects either the low or high band. The device is pack-  
aged on a 6mmx6mm laminate module with a protective plastic over-  
mold.  
„
„
Low Power Mode for Reduced  
EDGE Current  
Digital Bias Control for Simple  
Implementation of Low Power  
Mode  
„
Compact 6mmx6mm Pack-  
age  
Applications  
„
„
„
„
„
„
Quad-Band GSM/EDGE  
Handsets  
GSM/EDGE Transmitter Line-  
ups  
Ordering Information  
RF3159Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS/Power Amplifier Module  
Portable Battery-Powered  
Equipment  
RF3159  
Quad-Band GSM/EDGE/GSM850/EGSM900  
/DCS/PCS/Power Amplifier Module  
GSM850/EGSM900/DCS/  
PCS Products  
Power Amplifier Module, 5 Piece Sample Pack  
RF3159PCBA-41X Fully Assembled Evaluation Board  
GPRS Class 12 Compatible  
Products  
Mobile EDGE/GPRS Data  
Products  
Optimum Technology Matching® Applied  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
Si BJT  
GaN HEMT  
9
9
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
Rev A0 DS070102  
1 of 26  
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