Datasheet > RF1601T2D_11

RF1601T2D_11

更新时间： 2022-11-16 05:07:52

品牌	Logo	应用领域
罗姆 - ROHM		二极管快恢复二极管
页数	文件大小	规格书
4页	980K
描述
Fast recovery diodes

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RF1601T2D_11 数据手册

Data Sheet

Fast recovery diodes

RF1601T2D

Applications

Dimensions (Unit : mm)

Structure

General rectification

4.5±0.3

ꢀꢀꢀ 0.1

2.8±0.2

ꢀꢀꢀ 0.1

10.0±0.3

ꢀꢀꢀ 0.1

Features

(1) (2) (3)

1) Cathode common type.

(TO-220)

2) Ultra Low V^F

3) Very fast recovery

4) Low switching loss

①

1.2

1.3

0.8

Construction

Silicon epitaxial planar

(1) (2) (3)

0.7±0.1

0.05

2.6±0.5

ROHM : TO220FN

Manufacture Date

①

Absoslute maximum ratings (Ta=25C)

Parameter

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Limits

200

Symbol

V_RM

V_R

Unit

200

Average rectified forward current (*1)

Forward current surge peak (60Hz/1cyc)

Junction temperature

I_FSM

150

C

Storage temoerature

55 to 150

Tstg

(*1)Business frequency, Rating of R-load, Tc=120C. 1/2 Io per diode

Electrical characteristic (Ta=25C)

Parameter

Forward voltage

Conditions

Symbol Min.

Typ.

Max.

0.93

Unit

V_F

I_R

I_F=8A

Reverse current

μA

V_R=200V

I_F=0.5A,I_R=1A,Irr=0.25*I_R

Reverse recovery time

trr

www.rohm.com

2011.05 - Rev.D

1/3

12 3 4

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