Datasheet > RD16ESAB2

RD16ESAB2

更新时间： 2024-02-06 18:33:40

品牌	Logo	应用领域
日电电子 - NEC		测试二极管
页数	文件大小	规格书
7页	105K
描述
Zener Diode, 15.645V V(Z), 2.01%, 0.4W, Silicon, Unidirectional, DO-34, GLASS PACKAGE-2

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技术参数
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RD16ESAB2 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.84
Base Number Matches：	1

RD16ESAB2 数据手册

DATA SHEET

ZENER DIODES

RD2.0ES to RD39ES

400 mW DHD ZENER DIODE

(DO-34)

DESCRIPTION

PACKAGE DIMENSIONS

NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34

Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode)

construction having allowable power dissipation of 400 mW.

(in millimeters)

0.4

FEATURES

• DO-34 Glass sealed package

This diode can be inserted into a PC board with a shorter pitch (5 mm)

5 mm

Cathode

indication

2.0 MAX.

• Planar process

• DHD (Double Heatsink Diode) construction

• V^ZApplied E24 standard

ORDERING INFORMATION

DO-34 (JEDEC)

Marking color: Black

RD2.0ES to RD39ES with suffix "AB1", "AB2", or "AB3" should be applied

for orders for suffix "AB".

APPLICATIONS

Circuits for Constant Voltage, Constant Current, Waveform clipper, Surge absorber, etc.

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Forward Current

150 mA

400 mW

Power Dissipation

to see Fig. 6

to see Fig. 10

Surge Reverse Power

Junction Temperature

Storage Temperature

P^RSM

100 W (t = 10 µs)

175°C

–65 to +175°C

T^stg

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D13935EJ7V0DS00 (7th edition)

Date Published April 2003 N CP(K)

Printed in Japan

12 3 4 5 6 7

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