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RD10MB3

更新时间: 2024-02-02 01:20:42
品牌 Logo 应用领域
日电电子 - NEC 测试光电二极管
页数 文件大小 规格书
8页 65K
描述
Zener Diode, 10.33V V(Z), 2.13%, 0.2W, Silicon, Unidirectional, PLASTIC, SC-59, 3 PIN

RD10MB3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
配置:SINGLE二极管类型:ZENER DIODE
最大动态阻抗:30 Ω元件数量:1
最高工作温度:150 °C最大功率耗散:0.2 W
标称参考电压:10.33 V子类别:Voltage Reference Diodes
表面贴装:YES最大电压容差:2%
工作测试电流:5 mABase Number Matches:1

RD10MB3 数据手册

 浏览型号RD10MB3的Datasheet PDF文件第2页浏览型号RD10MB3的Datasheet PDF文件第3页浏览型号RD10MB3的Datasheet PDF文件第4页浏览型号RD10MB3的Datasheet PDF文件第5页浏览型号RD10MB3的Datasheet PDF文件第6页浏览型号RD10MB3的Datasheet PDF文件第7页 
DATA SHEET  
ZENER DIODES  
RD2.0M to RD47M  
ZENER DIODES  
200 mW 3-PIN MINI MOLD  
DESCRIPTION  
PACKAGE DIMENSIONS  
Type RD2.0M to RD47M Series are planar type zener diodes  
processing an allowable power dissipation of 200 mW.  
(Unit: mm)  
2.8 ± 0.2  
FEATURES  
+0.1  
–0.15  
0.65  
1.5  
Planar process  
VZ; Applied E24 standard.  
2
1
APPLICATIONS  
Circuits for,  
3
Constant Voltage, Constant Current,  
Waveform clipper, Surge absorber, etc.  
Marking  
MAXIMUM RATINGS (TA = 25°C)  
Power Dissipation  
P
200 mW  
Forward Current  
IF  
150 mA  
Junction Temperature  
Storage Temperature  
Peak Reverse Power  
Tj  
150°C  
Tstg  
PRSM  
–55 to +150°C  
100 W (t = 10 µs)  
1 . NC  
2 . Anode : A SC-59 (EIAJ)  
3 . Cathode: K  
A
2
K
3
1
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for availability  
and additional information.  
Document No. D14716EJ6V0DS00 (6th edition)  
(Previous No. DC-2141)  
Date Published June 2000 N CP(K)  
Printed in Japan  
1995  
©

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