Schottky Barrier Diode
Datasheet
RBR20T40AHZ
AEC-Q101 Qualified
Application
Dimensions (Unit : mm)
Structure
Switching power supply
Features
(1)
Anode
(2)
(3)
Cathode Anode
1) Cathode common dual type
2) High reliability
Low VF
3)
Construction
ROHM : TO220FN
Silicon epitaxial planar type
1
Manufacture date
Package Dimensions (Unit : mm)
7
540
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits
40
Unit
VRM
VR
Io
Duty≦0.5
Repetitive Peak Reverse Voltage
Reverse Voltage
V
V
Direct Reverse Voltage
40
60Hz half sin Wave, resistive load,
IO/2 per diode, Tc=120°C Max.
60Hz half sin wave, Non-repetitive at
Ta=25°C, 1cycle, per diode
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
20
A
IFSM
Tj
100
150
A
-
-
Operating Junction Temperature
Storage Temperature
°C
Tstg
55 to 150 °C
Electrical and Thermal Characteristics (Tj = 25°C)
Parameter
Forward Voltage
Conditions
IF=10A
Symbol
VF
Min. Typ. Max. Unit
-
-
-
-
-
-
0.62
240
2
V
VR=40V
IR
Reverse Current
A
Rth(j-c)
Junction to Case
Thermal Resistance
°C/W
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2017.07 - Rev.B
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