RBR1VWM40A
Schottky Barrier Diode
Data sheet
●Outline
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V
40
1
V
A
A
ꢀ
R
ꢀ
ꢀ
I
o
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ꢀ
I
20
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FSM
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●Features
●Inner Circuit
High reliability
Small power mold type
Low V
F
●Application
●Packaging Specifications
Packing
General rectification
Embossed Tape
Reel Size(mm)
Taping Width(mm)
Quantity(pcs)
180
8
3000
TR
●Structure
Silicon epitaxial planar
Taping Code
Marking
14
(T =25ºC unless otherwise specified)
●Absolute Maximum Ratings
c
Parameter
Repetitive peak reverse voltage
Reverse voltage
Symbol
Conditions
Duty≦0.5
Limits
40
40
Unit
V
V
V
RM
V
Reverse direct voltage
R
Glass epoxy mounted、
I
60Hzhalf sin waveform、resistive load、
Average rectified forward current
1
A
A
o
T =133℃ Max.
c
60Hzhalf sin waveform、Non-repetitive、
I
Peak forward surge current
20
FSM
one cycle、T =25℃
a
Junction temperature(1)
Storage temperature
-
-
150
-55 ~ 150
℃
T
T
stg
j
℃
Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dP /dT<1/R .
d
j
th(j-a)
(T =25ºC unless otherwise specified)
●Characteristics
j
Parameter
Forward voltage
Symbol
Conditions
Min. Typ. Max. Unit
V
I =1A
F
-
-
0.52
V
F
I
R
Reverse current
V =40V
R
-
-
50
μA
Attention
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2022/01/18_Rev.004