Datasheet > RBO08

RBO08

更新时间： 2023-12-20 18:44:02

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		电池
页数	文件大小	规格书
9页	304K
描述
电池反向和过压保护电路（RBO）

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中文翻译

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数据手册

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RBO08 数据手册

RBO08-40G / RBO08-40T

Symbol

_RM31/V_RM32Stand-off voltage Transil T1 / Transil T2.

V_BR31/V_BR32Breakdown voltage Transil T1 / Transil T2.

I_R31/I_R32

Leakage current Transil T1 / Transil T2.

V_CL31/V_CL32Clamping voltage Transil T1 / Transil T2.

Parameter

V_F13

I_PP

Forward voltage drop Diode D1.

Peak pulse current.

αT

Temperature coefficient of V_BR

C₃₁/C₃₂

Capacitance Transil T1 / Transil T2.

ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40°C < T_amb< + 85°C)

Value

Unit

Symbol

Test Conditions

Min.

Typ. Max.

1.5

V_{F 13}

I_F= 8 A

RBO08-40G

RBO08-40T

1.7

I_F= 8 A @ T_amb= 25°C

I_F= 4 A

1.45

1.3

V_{F 13}

RBO08-40G

RBO08-40T

1.35

1.2

I_F= 4 A @ T_amb= 25°C

I_F= 1 A

V_{F 13}

1.1

I_F= 1 A @ T_amb= 25°C

I_F= 1 A @ Tj = 85°C

1.0

0.9

ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40°C < T_amb< + 85°C)

Value

Symbol

Test Conditions

Unit

Min.

Typ. Max.

V_{BR 31}

I_{RM 31}

V_{CL 31}

α T

I_R= 1 mA

I_R= 1 mA, T_amb= 25°C

V_RM= 20 V

µA

V_RM= 20 V, T_amb= 25°C

I_PP= 15A, Tj initial = 25°C

Temperature coefficient of V_BR

µA

10/1000µs

10^-4/°C

C ₃₁

F = 1MHz

V_R= 0 V

1000

ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40°C < T_amb< + 85°C)

Value

Symbol

Test Conditions

Unit

Min.

Typ. Max.

V_{BR 32}

I_{RM 32}

V_{CL 32}

α T

I_R= 1 mA

8.5

I_R= 1 mA, T_amb= 25°C

V_RM= 20 V

µA

10^-4/

V_RM= 20 V, T_amb= 25°C

I_PP= 37.5 A

10/1000µs

Temperature coefficient of V_BR

3/9

1 234 5 6 7...9

中文翻译

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