RBO08-40T

更新时间： 2024-01-01 08:50:58

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	156K
描述
REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO

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中文翻译

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数据手册

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RBO08-40T 数据手册

RBO08-40G / RBO08-40M / RBO08-40T

Fig. 1 : Peak pulse power versus exponential

pulse duration (Tj initial = 85°C).

Fig. 2-1 : Clamping voltage versus peak pulse

current (Tj initial = 85°C).

Exponential waveform tp = 40 ms and tp = 1 ms

(TRANSIL T2).

p (kW)

VCL(V)

10.0

5.0

2.0

1.0

0.5

tp = 40ms

Transil T2

tp = 1ms

Diode D1

0.2

0.1

Ipp(A)

tp(ms)

0.1 0.2

0.5 1.0 2.0

5.0 10.0 20.0

50.0

100

Fig. 2-2 : Clamping voltage versus peak pulse

current (Tj initial = 85°C).

Fig. 3 :

versus junction temperature.

Relative variation of peak pulse power

Exponential waveform tp = 1 ms and tp = 20 µs

(TRANSIL T1).

VCL(V)

Ppp[Tj]/Ppp[Tj initial=85°C]

1.20

1.00

0.80

0.60

0.40

tp = 1ms

tp = 20

(A)

0.20

Tj initial (°C)

0.00

0.1 0.2

0.5 1.0 2.0

5.0 10.0 20.0 50.0 100.0

100

125

150

175

6/14

1...3 4 567 8 9...14

中文翻译

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