RBLQ3LAM10TF
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
●Outline
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V
100
3
V
A
A
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R
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I
o
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I
80
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FSM
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●Features
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High reliability
●Inner Circuit
Small power mold type
Low V and low I
F
R
Low capacitance
●Application
Switching power supply
Freewheel diode
●Packaging Specifications
Packing
Embossed Tape
Reverse polarity protection
Reel Size(mm)
Taping Width(mm)
Quantity(pcs)
180
12
3000
TR
●Structure
Trench MOS structure
Taping Code
Marking
3L
(T =25ºC unless otherwise specified)
●Absolute Maximum Ratings
c
Parameter
Symbol
Conditions
Limits
Unit
V
V
Repetitive peak reverse voltage
Duty≦0.5
100
RM
V
Reverse voltage
Reverse direct voltage
100
V
A
R
Glass epoxy mounted、
60Hzhalf sin waveform、resistive load、
I
o
Average rectified forward current
Peak forward surge current
Junction temperature(1)
Storage temperature
3
T =120℃ Max.
c
60Hzhalf sin waveform、Non-repetitive、
I
80
A
FSM
one cycle、T =25℃
a
T
-
-
175
℃
j
T
stg
-55 ~ 175
℃
Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dP /dT<1/R .
th(j-a)
d
j
Attention
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2021/06/10_Rev.002