Datasheet > RB154

RB154

更新时间： 2024-09-27 22:44:03

品牌	Logo	应用领域
固锝 - GOOD-ARK		二极管
页数	文件大小	规格书
2页	51K
描述
SINGLE-PHASE SILICON BRIDGE

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中文翻译

获取价格

技术参数
数据手册

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RB154 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.65
配置：	BRIDGE, 4 ELEMENTS	二极管类型：	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)：	1 V	最大非重复峰值正向电流：	50 A
元件数量：	4	最高工作温度：	150 °C
最大输出电流：	1.5 A	最大重复峰值反向电压：	400 V
子类别：	Bridge Rectifier Diodes	表面贴装：	NO
Base Number Matches：	1

RB154 数据手册

RB151 THRU RB157

SINGLE-PHAS

E SILICON BRIDGE

Reverse Voltage -

Forward Current -

50 to 1000 Volts

1.5 Amperes

Features

Surge overload rating - 50 amperes peak

Ideal for printed circuit board

Reliable low cost construction utilizing molded

plastic technique results in inexpensive product

Mounting Position: Any

DIMENSIONS

inches

DIM

Note

Max.

Min.

0.340

0.130

1.20

Max.

0.360

0.150

Min.

8.6

9.1

3.8

3.3

30.5

32.3

4.6

1.27

0.180

0.028

0.220

0.032

5.6

0.81

0.71

Maximum Ratings and Electrical Characteristics

Ratings at 25 ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Symbols

RB151 RB152 RB153 RB154 RB155 RB156 RB157

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Volts

RRM

RMS

Maximum DC blocking voltage

100

1000

Maximum average forward rectified current

T =25

1.5

Amps

(AV)

Peak forward surge current, 8.3mS single

half sine-wave superimposed on rated load

50.0

5.0

Amps

A²t

FSM

1²t Rating for fusing (t<8.35ms)

I²t

Maximum forward voltage drop

per element at 1.0A peak

1.0

Volt

Maximum DC reverse current at rated

DC blocking voltage per element

T =25

10.0

1.0

T^A=100

Operating temperature range

Storage temperature range

T_J

-55 to +125

-55 to +150

STG

中文翻译

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