R8001CND3FRA
Datasheet
ꢀꢀNch 800V 1A Power MOSFET
ꢀꢀ
llOutline
ꢀ
VDSS
800V
8.7Ω
±1.0A
36W
DPAK
RDS(on)(Max.)
TO-252
ID
ꢀ
PD
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llInner circuit
llFeatures
1) Low on-resistance
2) Fast switching speed
3) Drive circuits can be simple
4) Pb-free plating ; RoHS compliant
5) AEC-Q101ꢀqualified
llPackaging specifications
Embossed
Tape
Packing
Reel size (mm)
330
16
llApplication
Tape width (mm)
Type
Switching Power Supply
Quantity (pcs)
Taping code
Marking
2500
TL
R8001CND3
llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)
a
Parameter
Drain - Source voltage
Symbol
Value
800
±1.0
±4.0
±30
Unit
V
VDSS
*1
Continuous drain current (Tc = 25°C)
Pulsed drain current
ID
A
*2
IDP
A
VGSS
Gate - Source voltage
V
*3
IAS
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation (Tc = 25°C)
Junction temperature
0.5
A
*3
EAS
0.066
36
mJ
W
℃
℃
*4
PD
Tj
150
Tstg
Operating junction and storage temperature range
-55 to +150
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20191118 - Rev.002