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R76154H1000RR PDF预览

R76154H1000RR

更新时间: 2024-01-30 00:39:20
品牌 Logo 应用领域
基美 - KEMET 电容器
页数 文件大小 规格书
9页 1957K
描述
Film Capacitor, Polypropylene, 1000V, 2.5% +Tol, 2.5% -Tol, 0.15uF, Through Hole Mount, RADIAL LEADED

R76154H1000RR 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8532.25.00.70风险等级:5.68
其他特性:RATED AC VOLTAGE(V): 600电容:0.15 µF
电容器类型:FILM CAPACITOR介电材料:POLYPROPYLENE
JESD-609代码:e3安装特点:THROUGH HOLE MOUNT
负容差:2.5%端子数量:2
最高工作温度:85 °C最低工作温度:-55 °C
封装形状:RECTANGULAR PACKAGE包装方法:TR
正容差:2.5%额定(直流)电压(URdc):1000 V
表面贴装:NO端子面层:TIN
端子形状:WIREBase Number Matches:1

R76154H1000RR 数据手册

 浏览型号R76154H1000RR的Datasheet PDF文件第3页浏览型号R76154H1000RR的Datasheet PDF文件第4页浏览型号R76154H1000RR的Datasheet PDF文件第5页浏览型号R76154H1000RR的Datasheet PDF文件第6页浏览型号R76154H1000RR的Datasheet PDF文件第7页浏览型号R76154H1000RR的Datasheet PDF文件第9页 
NISSEI-ARCOTRONICS  
R76  
MMKP Series  
POLYPROPYLENE CAPACITOR WITH DOUBLE  
SIDED METALLIZED FILM ELECTRODES  
D.C. AND PULSE APPLICATIONS  
SERIES CODE: R76  
ELECTRICAL CHARACTERISTICS  
TEST METHOD AND PERFORMANCE  
Damp heat, steady state:  
Test conditions  
Rated voltage (VR):  
Temperature:  
+40°C ± 2°C  
93% ± 2%  
56 days  
250Vdc - 400Vdc - 630Vdc  
for 1 section  
for 2 sections  
Relative humidity (RH):  
Test duration:  
630Vdc - 1000Vdc - 1600Vdc - 2000Vdc  
Performance  
Rated temperature (TR):  
+85°C for VR (d.c.)  
Capacitance change (C/C): 2%  
+75°C for VR (a.c.)  
DF change (tgδ):  
Insulation resistance:  
10×10-4 at 1kHz  
50% of initial limit  
Voltage derating vs. temperature:  
The following decreasing factor has to be applied on the rated  
voltage:  
+85°C to 105°C: 1.25% per°C for VR (d.c.)  
+75°C to 105°C: 1.35% per°C for VR (a.c.)  
Endurance:  
Test conditions  
Temperature:  
Test duration:  
+85°C ± 2°C  
Capacitance range:  
2000 h  
680ρF to 10µF  
220ρF to 3.3µF  
1 section  
Voltage applied:  
1.25×VR (d.c)  
2 sections  
Performance  
Capacitance values:  
Capacitance change (C/C): 2%  
E 12 series (IEC 60063 Norm)  
DF change (tgδ):  
10×10-4 at 10kHz for C1µF  
10×10-4 at 1kHz for C>1µF  
50% of initial limit  
Capacitance tolerances (measured at 1 kHz):  
±5% (J); ±10% (K)  
for C < 1000ρF  
Insulation resistance:  
±2.5% (H); ±5% (J); ±10% (K)  
for C 1000ρF  
Total self-inductance (L):  
(lead length ~2mm)  
Resistance to soldering heat:  
Test conditions  
Pitch (mm) 7.5 10  
15 22.5 27.5 37.5  
Solder bath temperature:  
+260°C ± 5°C  
8
9
10  
18  
18  
20  
L (nH) ≈  
Dipping time (with heat screen): 10 s ± 1 s  
Performance  
Dissipation factor (DF):  
tgδ×10-4 at +25°C ± 5°C  
Capacitance change (C/C): 1%  
DF change (tgδ):  
10×10-4 at 10kHz for C1µF  
KHz  
C 0.1µF  
0.1µF < C 1µF  
C > 1µF  
4  
10×10-4 at 1kHz for C>1µF  
initial limit  
1
10  
3  
4  
15  
3  
6  
Insulation resistance:  
100  
Insulation resistance:  
Test conditions  
Temperature:  
Long term stability (after two years):  
Storage: standard environmental conditions see general  
information section.  
+25°C ± 5°C  
1 min  
Voltage charge time:  
Voltage charge:  
Performance  
Performance  
100Vdc  
Capacitance change (C/C): 0.5%  
1 x 105 Mfor C 0.33µF (5 x 105 M)*  
30000 s  
for C > 0.33µF (150000 s)*  
*Typical value  
Test voltage between terminations:  
1.6×VR applied for 2s at +25°C ± 5°C  

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