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R5323Z40A-TR-F PDF预览

R5323Z40A-TR-F

更新时间: 2023-08-15 00:00:00
品牌 Logo 应用领域
理光 - RICOH /
页数 文件大小 规格书
23页 188K
描述
Regulator

R5323Z40A-TR-F 数据手册

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R5323x  
ELECTRICAL CHARACTERISTICS  
R5323xxxxA/B  
Topt=25°C  
Symbol  
Item  
Conditions  
Min.  
×0.98  
150  
Typ. Max. Unit  
VINVOUT=1.0V  
VOUT  
Output voltage  
V
×1.02  
1mA  
IOUT  
30mA  
=
=
IOUT  
Output Current  
Load regulation  
mA  
mV  
VINVOUT=1.0V  
ΔVOUT/  
ΔIOUT  
VIN=Set VOUT+1V  
15  
40  
1mA  
IOUT  
150mA  
=
=
0.38  
0.35  
0.33  
0.32  
0.28  
0.22  
90  
0.70  
0.65  
0.60  
0.55  
0.50  
0.35  
120  
VOUT=1.5  
VOUT=1.6  
VOUT=1.7  
VDIF  
Dropout Voltage  
V
IOUT=150mA  
1.8V  
2.1V  
2.8V  
VOUT  
VOUT  
VOUT  
2.0V  
2.7V  
4.0V  
=
=
=
=
=
=
ISS  
Supply Current  
Standby Current  
VINVOUT=1.0V  
μA  
μA  
VINVOUT=1.0V  
VCE=GND  
Istandby  
0.1  
1.0  
ΔVOUT/  
ΔVIN  
Set VOUT+0.5V VIN 6.0V  
= =  
IOUT=30mA  
Line regulation  
0.02  
75  
0.10  
%/V  
Ripple 0.5Vp-p  
VINVOUT=1.0V,  
IOUT=30mA  
f=1kHz  
Note1  
RR  
Ripple Rejection  
Input Voltage  
dB  
V
65  
(In case that VOUT 1.7V,  
=
f=10kHz  
Note2  
VINVOUT=1.2V, IOUT=30mA)  
VIN  
2.0  
6.0  
ppm  
/°C  
ΔVOUT/  
ΔTopt  
Output Voltage  
Temperature Coefficient  
IOUT=30mA  
±100  
40°C Topt 85°C  
=
=
Ilim  
RPD  
VCEH  
VCEL  
en  
Short Current Limit  
Pull-down resistance for CE pin  
CE Input Voltage “H”  
CE Input Voltage “L”  
Output Noise  
40  
mA  
MΩ  
V
VOUT=0V  
0.7  
1.5  
0
2.0  
8.0  
6.0  
0.3  
V
30  
60  
BW=10Hz to 100kHz  
VCE=0V  
μVrms  
Low Output Nch Tr. ON  
Resistance (of B version)  
RLOW  
Ω
>
Note1: f=1kHz, 70dB as to VOUT 2.5V Output type.  
=
>
Note2: f=10kHz, 60dB as to VOUT 2.5V Output type.  
=
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)  
All of electronic equipment should be designed that the mounted semiconductor devices operate within the  
recommended operating conditions. The semiconductor devices cannot operate normally over the  
recommended operating conditions, even if when they are used over such conditions by momentary  
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue  
to operate over the recommended operating conditions.  
6

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