R4008AND

更新时间： 2025-07-19 09:41:43

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	1984K
描述
10V Drive Nch MOSFET

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中文翻译

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R4008AND 数据手册

Data Sheet

10V Drive Nch MOSFET

R4008AND

 Structure

 Dimensions (Unit : mm)

Silicon N-channel MOSFET

CPT3

(SC-63)

<SOT-428>

6.5

5.1

2.3

0.5

Features

1) Low on-resistance.

2) High-speed switching.

3) Wide SOA.

0.75

0.9 2.3

(1) Gate

(2) Drain

(3) Source

0.65

2.3

(1)

(2)

(3)

0.5

1.0

4) Drive circuits can be simple.

5) Parallel use is easy.

 Application

Switching

 Packaging specifications

 Inner circuit

Package

Taping

Type

Code

∗1

Basic ordering unit (pieces)

2500



R4008AND

(1) Gate

(2) Drain

(3) Source

(1)

(2)

(3)

 Absolute maximum ratings (Ta = 25C)

Parameter Symbol

Drain-source voltage

1 BODY DIODE

Limits

400

30

8

Unit

V_DSS

V_GSS

I_D

Gate-source voltage

Continuous

Pulsed

Drain current

32

48

I_DP

Continuous

Pulsed

I_S

Source current

(Body Diode)

I_SP

Avalanche current

Avalanche energy

Power dissipation

Channel temperature

I_AS

E_AS

P_D

4.3

150

T_ch

T_stg

C

Range of storage temperature

55 to 150

*1 Pw10s, Duty cycle1%

*2 Pw≤1s, Duty cycle≤1% Limited by Safe Operating Area.(V_DS≤30V)

*3 L 500H, V_DD=50V, R_G=25, T_ch=25C

*4 Limited only by maximum temperature allowed.

*5 T_C=25C

 Thermal resistance

Parameter

Channel to Case

Symbol

R_{th (ch-c)}

Limits

6.25

Unit

C / W

www.rohm.com

2011.10 - Rev.A

1/5

12 3 4 5 6

中文翻译

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