DUAL, RECTANGULAR
PHOTOMULTIPLIER TUBE
R1548
For Scintillation Counting and Positron CT Applications
10-Stage Dual Structure in a Rectangular Envelope
High Time Resolution, Good Coupling to Rectangular BGO
Good Space Utilization, Low Cross Talk
GENERAL
Parameter
Description/Value
300 to 650
Unit
nm
nm
—
mm dia.
—
Spectral Response
Wavelength of Maximum Response
420
Bialkali
(8 × 18) × 2 (dual)
Borosilicate glass
Linear focused
10 × 2 (dual)
Material
Minimum Useful Size
Photocathode
Window Material
Dynode
—
—
Structure
Number of Stages
—
—
Base
Suitable Socket
17-pin glass base
E678-17A (supplied)
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
1750
250
0.1
-80 to +50
Unit
Vdc
Vdc
mA
°C
Between Anode and Cathode
Between Anode and Last Dynode
Supply Voltage
Average Anode Current
Ambient Temperature
CHARACTERISTICS (at 25°C)
Parameter
Luminous (2856K)
Blue (with CS 5-58 filter)
Quantum Efficiency at 480nm
Luminous (2856K)
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
Typ.
80
9.5
23
200
24
2.5 × 106
20
Max.
—
—
—
—
—
—
250
—
—
—
—
—
—
2
Unit
µA/lm
µA/lm-b
%
A/lm
A/lm-b
—
Cathode Sensitivity
Anode Sensitivity
Blue (with CS No. 5-58 filter)
Gain
Anode Dark Current
nA
ns
ns
ns
%
ns
ns
—
Anode Pulse Rise Time
Electron Transit Time
Transit Time Spread
1.8
20
1.0
20
2.4
4.8
1
Time Response
Energy Resolution for 511keV γ-ray with BGO
BGO Time Resolution
(BGO-Plastic)
FWHM
FWTM
Gain Ratio (one segment to another)
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10
P
Ratio
4
1
1.5 1
1
1
1
1
1
1
1
Supply Voltage: 1250Vdc, K: Cathode, Dy: Dynode, P: Anode
NOTE: The gain of each segment can be controlled within 1 to 0.3 by adjusting independent dynode (7th dynode) potential.
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
1998 Hamamatsu Photonics K.K.
©