Datasheet > R1170S151B-E2-FE

R1170S151B-E2-FE

更新时间： 2022-02-26 08:51:36

品牌	Logo	应用领域
理光 - RICOH		/
页数	文件大小	规格书
22页	215K
描述
800mA LDO REGULATOR

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数据手册

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R1170S151B-E2-FE 数据手册

R1170x

ELECTRICAL CHARACTERISTICS

• R1170xxxxA

Topt=25°C

Symbol

Item

Conditions

Min.

Typ.

Max. Unit

VIN

Input Voltage

Supply Current

6.0

160

μA

V^IN−VOUT=1.0V,

V^CE=GND

ISS

Istandby Standby Current

0.1

1.0

V^IN=VCE=6.0V

V^IN−VOUT=1.0V

I^OUT=100mA

VOUT

Output voltage

Load regulation

×0.98

×1.02

ΔVOUT/

ΔI^OUT

V^IN−VOUT=1.0V

100

1mA

IOUT

300mA

0.35

0.30

0.25

0.20

0.15

0.12

0.45

0.35

0.30

0.25

0.20

0.18

VOUT=1.5V

VOUT=1.6V

VOUT=1.7V

VDIF

Dropout Voltage

I^OUT=300mA

1.8V

VOUT

2.0V

2.4V

5.0V

2.1V

2.5V

ΔVOUT/

ΔV^IN

I^OUT=100mA

V^OUT+0.5V VIN 6.0V

Line regulation

0.05

0.30

%/V

1.5V

VOUT

4.7V:

f=1kHz, V^IN−VOUT=1.0V

Ripple 0.5Vp-p

Ripple Rejection

4.8V

VOUT

5.0V:

f=1kHz, V^IN=5.7V

Ripple 0.5Vp-p

ppm/

°C

ΔVOUT/ Output Voltage

ΔTopt

I^OUT=10mA, VIN−VOUT=1.0V

−40°C Topt 85°C

= =

±100

Temperature Coefficient

ILIM

Output Current

800

MΩ

V^IN−VOUT=1.0V

V^OUT=0V

ISC

Short Current Limit

Pull-up resistancefor

RPU

VCEH

VCEL

1.25

1.50

2.50

5.00

V^IN

Input Voltage "H"

Input Voltage "L"

0.25

Thermal Shutdown

Detector Threshold Temperature

TTSD

TTSR

Junction Temperature

150

120

°C

Thermal Shutdown

Released Temperature

1 2 3 456 7 8...22

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