Datasheet > R0830LS14G

R0830LS14G

更新时间： 2022-12-01 23:24:41

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
12页	232K
描述
Silicon Controlled Rectifier, 1713 A, 1400 V, SCR, 101A336, 3 PIN

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R0830LS14G 数据手册

WESTCODE ^{Positive development in power electronics}

R0830LS12x to R0830LS14x

10.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.

Let E_pbe the Energy per pulse for a given current and pulse width, in joules

Let R_th(J-Hs)be the steady-state d.c. thermal resistance (junction to sink)

and T_SINKbe the heat sink temperature.

Then the average dissipation will be:

−

(

)

W_AVE_Pf and T_{SINK (max.)}125 W_AVR_th

(

J −Hs

)

11.0 Reverse recovery ratings

(i) Q_rais based on 50% I_rmchord as shown in Fig. 1 below.

Fig. 1

(ii) Q_rris based on a 150 s integration time.

150µs

Q_rr= i_rr.dt

∫

i.e.

K Factor =

(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and

reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be

constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can

then be evaluated from:

−

(

)

T_{SINK (new)}T_{SINK (original)}E k f R_th

(

J −Hs

)

where k = 0.227 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature.

R_th(J-Hs)= d.c. thermal resistance (°C/W).

Data Sheet. Types R0830LS12x to R0830LS14x Issue 1

Page 4 of 12

April, 2001

1 2 345 6 7...12

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