Datasheet > R0830LS14G

R0830LS14G

更新时间： 2022-12-01 23:24:41

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
12页	232K
描述
Silicon Controlled Rectifier, 1713 A, 1400 V, SCR, 101A336, 3 PIN

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数据手册

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R0830LS14G 数据手册

WESTCODE ^{Positive development in power electronics}

R0830LS12x to R0830LS14x

Characteristics

PARAMETER

MIN.

TYP. MAX. TEST CONDITIONS

UNITS

(Note 1)

V_TM

V₀

Maximum peak on-state voltage

Threshold voltage

2.4

1.9

0.357

I_TM=1400A

r_s

Slope resistance

Ω

dv/dt

I_DRM

I_RRM

V_GT

I_GT

I_H

Critical rate of rise of off-state voltage

Peak off-state current

Peak reverse current

Gate trigger voltage

200

V_D=80% V_DRM, linear ramp

Rated V_DRM

V/ s

Rated V_RRM

3.0

300

T_j=25°C

V_D=10V, I_T=3A

Gate trigger current

Holding current

1000 T_j=25°C

1.0

t_gt

Gate-controlled turn-on delay time

Turn-on time

0.4

0.8

285

110

2.7

V_D=67% V_DRM, I_T=1500A, di/dt=60A/µs,

_FG=2A, t_r=0.5µs, T_j=25°C

t_gd

2.0

Q_rr

Q_ra

I_rr

Recovered charge

µC

Recovered charge, 50% Chord

Reverse recovery current

Reverse recovery time

130

_TM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V

t_rr

µs

_TM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V, V_dr=33%V_DRM, dV_dr/dt=20V/µs

I_TM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V, V_dr=33%V_DRM, dV_dr/dt=200V/µs

t_q

Turn-off time (note 2)

µs

0.032 Double side cooled

K/W

R_th(j-hs)Thermal resistance, junction to heatsink

0.064 Single side cooled

Mounting force

Weight

W_t

340

Notes:-

1) Unless otherwise indicated T_j=125°C.

2) The required t_q(specified with dV_dr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information

for details of t_qcodes.

Data Sheet. Types R0830LS12x to R0830LS14x Issue 1

Page 2 of 12

April, 2001

123 4 5 6 7...12

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