Datasheet > R0487YS10F

R0487YS10F

更新时间： 2024-01-04 16:07:46

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
12页	385K
描述
Silicon Controlled Rectifier,

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R0487YS10F 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.68	Base Number Matches：	1

R0487YS10F 数据手册

WESTCODE An IXYS Company

Distributed Gate Thyristor types R0487YS10# to R0487YS14#

15.0 Reverse Recovery Loss

15.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and

reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be

constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can

then be evaluated from the following:

T_{K (new)}= T_{K (original )}− E

(

k + f R_th

)

(

)

Where k=0.227 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature.

R_th(JK)= d.c. thermal resistance (°C/W).

The total dissipation is now given by:

W_(TOT)= W_(original)+ E f

15.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design

purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).

Let f be the operating frequency in Hz

T_K

= T_K

−

)

(

E R_thf

)

(

new

)

(

original

Where T_{K (new)}is the required maximum heat sink temperature and

T_{K (original)}is the heat sink temperature given with the frequency ratings.

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage

to a peak value (V_rm) of 67% of the maximum grade. If a different grade is being used or V_rmis other than

67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value

obtained from the curves.

NOTE 1- Reverse Recovery Loss by Measurement

This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge, care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

damped snubber, connected across diode anode to cathode. The formula used for the calculation

of this snubber is shown below:

V_r

= Commutating source voltage

V_r

R²= 4

Where: C_S= Snubber capacitance

C_S

= Snubber resistance

Data Sheet. Type R0487YS10# to R0487YS14# Issue 3

Page 5 of 12

October, 2004

1 2 3 456 7 8...12

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与R0487YS10F相关器件

型号	品牌	描述	获取价格	数据表
R0487YS12#	LITTELFUSE	Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 101A335, 3 PIN	获取价格
R0487YS12D	LITTELFUSE	Silicon Controlled Rectifier, 982A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 101A335	获取价格
R0487YS12E	LITTELFUSE	Silicon Controlled Rectifier, 982A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 101A335	获取价格
R0487YS12F	LITTELFUSE	Silicon Controlled Rectifier, 982A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 101A335	获取价格
R0487YS14#	LITTELFUSE	Silicon Controlled Rectifier, 1400V V(DRM), 1400V V(RRM), 1 Element, 101A335, 3 PIN	获取价格
R0487YS14D	IXYS	Silicon Controlled Rectifier, 982A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, 101A335	获取价格

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