Datasheet > QT118H-IS

QT118H-IS

更新时间： 2024-02-26 23:49:15

品牌	Logo	应用领域
其他 - ETC		传感器
页数	文件大小	规格书
13页	431K
描述
CHARGE-TRANSFER TOUCH SENSOR

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QT118H-IS 技术参数

The circuit is remarkably immune to HF RFI provided that

certain design rules be adhered to:

7. The sense electrode should be kept away from other

conductors, even ground, which can re-radiate in RF

currents.

1. Use SMT components.

8. If the ESD diodes are not used, use Re1 in the electrode

trace anyway, with a value as large as possible without

compromising gain.

2. Always use a ground plane under the circuit.

3. Use a 0.1uF bypass cap very close to the supply pins.

4. If ESD diodes are used, always use Re1, Re2, and Cf.

Make Re1 / Re2 as large as possible without

compromising gain (depends on Cf and Cx).

Cf acts to shunt aside RF from entering the two diodes, thus

preventing their conduction due to RF currents. This form of

conduction will lead to false or erratic operation. Cf also acts

to lower sensitivity, and in many cases Cs will need to be

increased to compensate for this loss.

5. Keep all ESD components close to the IC.

6. Do not route the sense wire near other traces or wires

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型号	品牌	描述	获取价格	数据表
QT118H-ISG	QUANTUM	CHARGE-TRANSFER TOUCH SENSOR	获取价格
QT118H-S	ETC	CHARGE-TRANSFER TOUCH SENSOR	获取价格
QT12C-SERIES	ETC	Peripheral IC	获取价格
QT12E-SERIES	ETC	Peripheral IC	获取价格
QT12HC-SERIES	ETC	Peripheral IC	获取价格
QT12T-SERIES	ETC	Peripheral IC	获取价格