Datasheet > QPB1500

QPB1500

更新时间： 2022-02-26 12:11:54

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
14页	1201K
描述
Ku-Band 25 W GaN Power Amplifier

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QPB1500 数据手册

QPB1500

Ku-Band 25 W GaN Power Amplifier

Absolute Maximum Ratings

Recommended Operating Conditions

Parameter

Valueꢀ/ꢀRange

29.5ꢀV

Parameter

Valueꢀ/ꢀRange

28ꢀV

Drain Voltage (V_D)

Gate Voltage Range (V_G)

Drain Current (I_D)

Drain Current (I_DQ

Drain Current Under RF Drive

(I_{D_DRIVE}

)

450ꢀmA

−5 to 0ꢀV

7.2ꢀA

See plots page 6

−2.5ꢀV (Typ.)

See plots p. 6

−40 to 85ꢀ°C

)

Gate Current (I_G)

See plot page 3

Gate Voltage (V_G)

Power Dissipation (P_DISS), 85ꢀ°C

Input Power (P_IN) CW, 50ꢀꢁ,

V_D= +28ꢀV, I_DQ= 450 mA, 85ꢀ°C

Input Power (P_IN), CW, VSWR 3:1,

V_D= +28ꢀV, I_DQ= 450 mA, 85ꢀ°C

80ꢀW

Gate Current Under RF Drive

)

34ꢀdBm

(I_{G_DRIVE}

Temperature (T_BASE

)

31ꢀdBm

275ꢀ°C

Electrical specifications are measured at specified test

conditions. Specifications are not guaranteed over all

recommended operating conditions.

Channel Temperature (T_CH)

Mounting Temperature

(30 Seconds)

260ꢀ°C

Storage Temperature

−55 to 150ꢀ°C

Operation of this device outside the parameter ranges given

above may cause permanent damage. These are stress ratings

only, and functional operation of the device at these conditions is

not implied.

Electrical Specifications

Parameter

Operational Frequency Range

Min

14.85

Typ

Max

15.75

Units

GHz

Small Signal Gain

Input Return Loss

Output Return Loss

Output Power (at P_IN= 20ꢀdBm)

Power Added Efficiency (at P_IN= 20ꢀdBm)

Power Gain (at P_IN= 20ꢀdBm)

IM3 @ 30ꢀdBm/Tone

44.2

35.5

24.2

-29

dBm

dBc

Output Power Temperature Coefficient

(25ꢀ°C to 85ꢀ°C only, P_IN= 20ꢀdBm)

−0.024

dBm/°C

Test conditions unless otherwise noted: 25ꢀ°C, V_D= +20ꢀV, I_DQ= 560ꢀmA, V_G= −2.5ꢀV typical.

- 2 of 14 -

Data Sheet Rev. A, June 26, 2017

www.qorvo.com

123 4 5 6 7...14

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