生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-X19 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Is Samacsys: | N | 最大集电极电流 (IC): | 50 A |
配置: | COMPLEX | 最小直流电流增益 (hFE): | 75 |
最大降落时间(tf): | 3000 ns | JESD-30 代码: | R-PUFM-X19 |
元件数量: | 6 | 端子数量: | 19 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Power | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管元件材料: | SILICON | VCEsat-Max: | 3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
KE721203 | POWEREX |
功能相似 |
Power Bipolar Transistor, 30A I(C), 1200V V(BR)CEO, 6-Element, NPN, Silicon, Plastic/Epoxy | |
6DI30A-120 | FUJI |
功能相似 |
POWER TRANSISTOR MODULE | |
QM30TB-24 | MITSUBISHI |
功能相似 |
MEDIUM POWER SWITCHING USE INSULATED TYPE |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
QM50TB24B | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CEO | 50A I(C) | |
QM50TB-24B | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM50TB-2H | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM50TB2HB | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 50A I(C) | |
QM50TB-2HB | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM50TF-HB | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM50TX-H | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM50TX-HB | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM55001 | QORVO |
获取价格 |
Mid-Band Low-Band NB-IoT TxM | |
QM55001DK | QORVO |
获取价格 |
Mid-Band Low-Band NB-IoT TxM |