Datasheet > QJXX25LH6

QJXX25LH6

更新时间： 2022-05-14 22:09:06

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
9页	583K
描述
25 Amp High Temperature Alternistor Triacs

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QJXX25LH6 数据手册

Thyristors

25 Amp High Temperature Alternistor Triacs

Absolute Maximum Ratings – AlternistorTriac

Symbol

Parameter

Test Conditions

QJxx25LHy

Value

Unit

T_C= 90°C

T_C= 110°C

QJxx25KH6

QJxx25JH6

I_T(RMS)

RMS on-state current

QJxx25RHy

QJxx25NHy

T_C= 120°C

Single half cycle; f = 50Hz;

208

250

T_J(initial) = 25°C

I_TSM

Peak non-repetitive surge current

Single half cycle; f = 60Hz;

T_J(initial) = 25°C

I²t

di/dt

I_GTM

P_G(AV)

T_stg

I²t Value for fusing

Critical rate-of-rise of on-state current

Peak gate current

t_p= 8.3ms

f = 60Hz;T_J=150°C

t_p=20μs, T_J= 150°C

T_J= 150°C

260

100

A²s

A/μs

Average gate power dissipation

Storage temperature range

0.5

°C

-40 to 150

V_DRM/V_RRM+100

V_DRM/V_RRM+200

T_J

Operating junction temperature range

Peak non-repetitive blocking voltage

_DSM/V_RSM

Pulse Width =100μs

600V

800V

xx = voltage/10

Electrical Characteristics (T_J= 25°C, unless otherwise speciﬁed) — AlternistorTriac

Value

Symbol

Test Condition

Quadrant

Unit

QJxx25xH4

QJxx25xH5

QJxx25xH6

I_GT

V_GT

V_GD

I-II-III

MAX.

MIN.

V_D=12V R_L=60Ω

1.3

V_D=V_DRMR_L=3.3KΩT_J=150°C

I_T=400mA

0.15

I_H

MAX.

100

400V

600V

800V

575

500

450

600

dv/dt

V_D=V_DRMGate OpenT_J=150°C

MIN.

V/μs

350

(dv/dt)c

t_gt

(di/dt)c=13.3A/msT_J=150°C

I_G=2XI_GTPW=15s I_T=35.4(pk)

MIN.

TYP,

V/μs

μs

Static Characteristics

Symbol

Test Conditions

I_T= 35.4A; t_p= 380 μs

Value

Unit

V_TM

MAX.

1.8

T_J= 25°C

T_J= 125°C

T_J= 150°C

I_DRM/ I_RRM

V_DRM/ V_RRM

2000

4000

μA

xx = voltage/10, x = package

Speciﬁcations are subject to change without notice.

Revised: 10/29/19

123 4 5 6 7...9

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